%0 Generic
%T Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part I: band structure in the polysilicon emitter obtained from electrical measurements
%A Kondo, M.
%A Kobayashi, T.
%A Tamaki, Y.
%I Institute of Electrical and Electronics Engineers (IEEE)
%@ 0018-9383
%K Electrical and Electronic Engineering
%K Electronic, Optical and Magnetic Materials
%D 1995
%C Institute of Electrical and Electronics Engineers (IEEE)
%U http://slubdd.de/katalog?TN_libero_mab2
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