%0 Generic
%T The role of Ar+, CH+<inf>4</inf>, O+<inf>2</inf>and backscattered Pb+ ions during Nb/Oxide/PbAuIn edge junction fabrication
%A Brosious, P.
%I Institute of Electrical and Electronics Engineers (IEEE)
%@ 0018-9464
%K Electrical and Electronic Engineering
%K Electronic, Optical and Magnetic Materials
%D 1985
%C Institute of Electrical and Electronics Engineers (IEEE)
%U http://slubdd.de/katalog?TN_libero_mab2
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