%0 Generic
%T Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation
%A Kupke, Steve
%A Knebel, Steve
%A Ocker, Johannes
%A Slesazeck, Stefan
%A Agaiby, Rimoon
%A Trentzsch, Martin
%A Mikolajick, Thomas
%I Institute of Electrical and Electronics Engineers (IEEE)
%@ 0741-3106
%@ 1558-0563
%K Electrical and Electronic Engineering
%K Electronic, Optical and Magnetic Materials
%D 2015
%C Institute of Electrical and Electronics Engineers (IEEE)
%U http://slubdd.de/katalog?TN_libero_mab2
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