%0 Generic
%T An Analytical Modeling of Threshold Voltage and Subthreshold Swing on Dual Material Surrounding Gate Nanoscale MOSFETs for High Speed Wireless Communication
%A Balamurugan, N.B.
%A Sankaranarayanan, K.
%A Amutha, P.
%A John, M. Fathima
%I The Institute of Electronics Engineers of Korea
%@ 1598-1657
%K Electrical and Electronic Engineering
%K Electronic, Optical and Magnetic Materials
%D 2008
%C The Institute of Electronics Engineers of Korea
%U http://slubdd.de/katalog?TN_libero_mab2
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