author = { Ture, Erdin },

title = { GaN-based Tri-gate high electron mobility transistors },

publisher = {},

keywords = { Hochschulschrift , Galliumnitrid , Hochfrequenzleistungstransistor , HEMT },

year = {December 2016},

abstract = {IN COPYRIGHT http://rightsstatements.org/page/InC/1.0 rs},

address = { Freiburg },

url = { http://slubdd.de/katalog?TN_libero_mab2 }