%0 Generic
%T Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
%A Killat, N.
%A Montes Bajo, M.
%A Paskova, T.
%A Evans, K. R.
%A Leach, J.
%A Li, X.
%A Özgür, Ü.
%A Morkoç, H.
%A Chabak, K. D.
%A Crespo, A.
%A Gillespie, J. K.
%A Fitch, R.
%A Kossler, M.
%A Walker, D. E.
%A Trejo, M.
%A Via, G. D.
%A Blevins, J. D.
%A Kuball, M.
%I AIP Publishing
%@ 0003-6951
%@ 1077-3118
%K Physics and Astronomy (miscellaneous)
%D 2013
%C AIP Publishing
%U http://slubdd.de/katalog?TN_libero_mab2
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