@misc {TN_libero_mab2,
author = { Tapajna, M. AND Killat, N. AND Moereke, J. AND Paskova, T. AND Evans, K. R. AND Leach, J. AND Li, X. AND Ozgur, Ü AND Morkoc, H. AND Chabak, K. D. AND Crespo, A. AND Gillespie, J. K. AND Fitch, R. AND Kossler, M. AND Walker, D. E. AND Trejo, M. AND Via, G. D. AND Blevins, J. D. AND Kuball, M. },
title = { Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates },
publisher = {IEEE},
isbn = {0741-3106},
isbn = {1558-0563},
keywords = { Gallium nitride , HEMTs , MODFETs , Degradation , Logic gates , Aluminum gallium nitride , Substrates , reliability , AlGaN/GaN HEMT , bulk GaN , electrical stress , electroluminescence (EL) },
year = {2012},
url = { http://slubdd.de/katalog?TN_libero_mab2 }
}
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