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Yan, Donghang [Author]; Wang, Haibo [Author]; Du, Baoxun [Author]

Introduction to organic semiconductor heterojunctions

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Singapore [u.a.]: Wiley, 2010
Liu, William [Author]

Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs

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New York; Weinheim [u.a.]: Wiley, c 1999

Published in: A Wiley-Interscience publication
Scheer, Roland [Author]; Schock, Hans-Werner [Author]

Chalcogenide photovoltaics : physics, technologies, and thin film devices

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Weinheim: Wiley-VCH, 2011
Manasreh, Mahmoud Omar [Author]

Semiconductor heterojunctions and nanostructures

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New York, NY [u.a.]: McGraw-Hill Professional, 2005
Sark, Wilfried van [Editor]; Korte, Lars [Editor]; Roca, Francesco [Editor]

Physics and technology of amorphous-crystalline heterostructure silicon solar cells

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Berlin; Heidelberg: Springer, [2012]

Published in: Engineering materials
Rosenbaum, Tommy [Author] ; Aniel, Frédéric [Degree supervisor]; Danneville, François [Degree supervisor] Université de Bordeaux, Technische Universität Dresden Fakultät Elektrotechnik und Informationstechnik

Performance prediction of a future silicon-germanium heterojunction bipolar transistor technology using a heterogeneous set of simulation tools and approaches - [1. Auflage]

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Norderstedt: BoD-Books on Demand, [2017]
Reisch, Michael [Author]

High-frequency bipolar transistors : physics, modeling, applications

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Berlin; Heidelberg [u.a.]: Springer, 2003

Published in: Advanced microelectronics ; 11
Schmundt, Holger [Author]

Implantationsfreie Dotierung des Basisanschlusses von Si/SiGe-Heterobipolartransistoren in Einfach-Polysilizium-Technologie - [1. Aufl.]

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Göttingen: Cuvillier, 2001
Schüßler, Martin [Author]

Neue Konzepte der Technologie, Zuverlässigkeitsanalyse und Anwendung von GaAs HBT - [Als Ms. gedr.]

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Aachen: Shaker, 1998

Published in: Berichte aus der Hochfrequenztechnik
Capasso, Federico [Editor]; Margaritondo, Giorgio [Other]

Heterojunction band discontinuities : Physics and device applications

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Amsterdam [u.a.]: North-Holland, 1987
Berchtold, Klaus [Author]

Grenzschichtuntersuchungen an InSb-Si-Heteroübergängen

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1971
Eichhorn, Gerd [Author] ; Arnold, Heinrich [Other]; Sackmann, Horst [Other]

Herstellung epitaktischer Heteroübergänge aus Zinkselenid und Galliumarsenid durch chemischen Transport

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1969
Grabosch, Günter [Author]

Herstellung und Charakterisierung von PECVD abgeschiedenem mikrokristallinem Silizium

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2000
Pawlak, Andreas [Author]

Advanced modeling of silicon-germanium heterojunction bipolar transistors - [1. Auflage]

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Dresden: TUDpress, 2015
Hung, Tran Hoang [Author] ; Tran-Hoang-Hung [Other]

Physics-based analytical modeling of SiGe heterojunction bipolar transistors for high-speed integrated circuits

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Dresden: TUDpress, Verl. der Wiss., 2006
Schnyder, Iwan [Author]

An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits

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2005 ; Mikrofiche-Ausg.
Männig, Bert [Author]

Organische p-i-n Solarzellen

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2004
Korndörfer, Falk [Author]

Zum thermischen Widerstand von Silicium-Germanium-Hetero-Bipolartransistoren

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Chemnitz: Universitätsverlag Chemnitz, 2014
Mau, Hendrik [Author]

Anpassung und Implementierung des Energietransportmodells zur vergleichenden Simulation mit dem Drift-Diffusions-Modell an SiGe-Heterobipolartransistoren

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1999
Ross, R. Lee [Editor] ; Advanced Study Institute on Pseudomorphic HEMT Technology and Applications 1994 Erice

Pseudomorphic HEMT technology and applications ; [proceedings of the NATO Advanced Study Institute on Pseudomorphic HEMT Technology and Applications Erice, Sicily, Italy, July 14-25, 1994]

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Dordrecht; London [u.a.]: Kluwer Academic, 1996

Published in: NATO: NATO ASI series / E ; 309

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