author = { Waechtler, Thomas AND Schulze, Steffen AND Hofmann, Lutz AND Hermann, Sascha AND Roth, Nina AND Schulz, Stefan E. AND Gessner, Thomas AND Lang, Heinrich AND Hietschold, Michael },

title = { Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru },

publisher = {Technische Universität Chemnitz},

publisher = {Fraunhofer ENAS},

publisher = {American Vacuum Society (AVS)},

keywords = { Reduction , Dielectric function , Electroplating , Galvanische Abscheidung , Atomic Layer Deposition (ALD) , Siliciumdioxid , Kupfer , Ellipsometry , Ellipsometrie , ULSI , Copper , Thin film , Kupferoxide , Metallisierungsschicht , Verkupferung , Copper oxide , Tantalum nitride , Reduktion <Chemie> , Tantalnitride , Silicon oxide , Metallization , Dünne Schicht , Ruthenium , Dielektrische Funktion },

year = {2009-08-10},

abstract = {Quelle: AVS 9th International Conference on Atomic Layer Deposition (ALD 2009), Monterey, CA (USA), July 19-22, 2009},

address = { Chemnitz },

url = { http://slubdd.de/katalog?TN_libero_mab2 }