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Gutsche, Christoph; Niepelt, Raphael; Gnauck, Martin; Lysov, Andrey; Prost, Werner; Ronning, Carsten; Tegude, Franz-Josef

Direct Determination of Minority Carrier Diffusion Lengths at Axial GaAs Nanowire p–n Junctions

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American Chemical Society (ACS), 2012

Published in: Nano Letters
Gutsche Christoph; Lysov Andrey; Regolin Ingo; Blekker Kai; Prost Werner; Tegude Franz-Josef

n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

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2011

Published in: Nanoscale Research Letters
Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

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Springer Science and Business Media LLC, 2011

Published in: Nanoscale Research Letters
Ehrich, Silja; Driesen, Jorn; Neumann, Stefan; Topaloglu, Serkan; Brockerhoff, Wolfgang; Tegude, Franz-Josef

Investigation of the RF noise behavior of InP-based DHBT with InGaAs base and GaAsSb base

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SPIE, 2004

Published in: SPIE Proceedings
Berntgen, Jürgen; Lim, Teck Leong; Daumann, Walter; Auer, Uwe; Tegude, Franz-Josef; Matulionis, Arvydas; Heime, Klaus

Hooge parameter of InP-based 2DEG structures and its dependence on channel design and temperature

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American Institute of Physics, 1999

Published in: AIP Conference Proceedings
Keiper, Dietmar; Velling, Peter; Prost, Werner; Agethen, Michael; Tegude, Franz-Josef; Landgren, Gunnar

Metalorganic Vapour Phase Epitaxy Growth of InP-based Heterojunction Bipolar Transistors with Carbon Doped InGaAs Base Using Tertiarybutylarsine and Tertiarybutylphosphine in N2 Ambient

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IOP Publishing, 2000

Published in: Japanese Journal of Applied Physics
Daumann, Walter; Bertenburg, Ralf M.; van den Berg, Christophe; Tegude, Franz-Josef

Novel resist and exposure strategy for high-resolution electron-beam lithography

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SPIE, 1997

Published in: Charged Particle Optics III
Lindner, A.; Liu, Q.; Scheffer, F.; Prost, W.; Tegude, Franz-Josef

Low-pressure metallorganic vapor-phase epitaxy (LP-MOVPE) growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates

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SPIE, 1994

Published in: SPIE Proceedings
Liborius, Lisa; Bieniek, Jan; Nägelein, Andreas; Tegude, Franz-Josef; Prost, Werner; Hannappel, Thomas; Poloczek, Artur; Weimann, Nils

n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions

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Wiley, 2020

Published in: physica status solidi (b)
Liborius, Lisa; Heyer, Fabian; Arzi, Khaled; Speich, Claudia; Prost, Werner; Tegude, Franz-Josef; Weimann, Nils; Poloczek, Artur

Toward Nanowire HBT: Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell Nanowires

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Wiley, 2018

Published in: physica status solidi (a)
Blekker, Kai; Munstermann, Benjamin; Matiss, Andreas; Do, Quoc Thai; Regolin, Ingo; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef

High-Frequency Measurements on InAs Nanowire Field-Effect Transistors Using Coplanar Waveguide Contacts

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Institute of Electrical and Electronics Engineers (IEEE), 2010

Published in: IEEE Transactions on Nanotechnology
Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander; Pfingsten, Oliver; Poloczek, Artur; Blumenthal, Sarah; Keller, Gregor; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef

High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)

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American Chemical Society (ACS), 2015

Published in: Nano Letters
Grange, Rachel; Brönstrup, Gerald; Sergeyev, Anton; Richter, Jessica; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef

Imaging of waveguiding and scattering interferences in individual GaAs nanowires via second-harmonic generation

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SPIE, 2012

Published in: SPIE Proceedings
Gutsche, Christoph; Lysov, Andrey; Braam, Daniel; Regolin, Ingo; Keller, Gregor; Li, Zi‐An; Geller, Martin; Spasova, Marina; Prost, Werner; Tegude, Franz‐Josef

n‐GaAs/InGaP/p‐GaAs Core‐Multishell Nanowire Diodes for Efficient Light‐to‐Current Conversion

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Wiley, 2012

Published in: Advanced Functional Materials
Li, Zi-An; Möller, Christina; Migunov, Vadim; Spasova, Marina; Farle, Michael; Lysov, Andrey; Gutsche, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Ercius, Peter

Planar-defect characteristics and cross-sections of 〈001〉, 〈111〉, and 〈112〉 InAs nanowires

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AIP Publishing, 2011

Published in: Journal of Applied Physics
Lysov, Andrey; Vinaji, Sasa; Offer, Matthias; Gutsche, Christoph; Regolin, Ingo; Mertin, Wolfgang; Geller, Martin; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef

Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes

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Springer Science and Business Media LLC, 2011

Published in: Nano Research
Borschel, Christian; Niepelt, Raphael; Geburt, Sebastian; Gutsche, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz‐Josef; Stichtenoth, Daniel; Schwen, Daniel; Ronning, Carsten

Alignment of Semiconductor Nanowires Using Ion Beams

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Wiley, 2009

Published in: Small
Grange, Rachel; Brönstrup, Gerald; Kiometzis, Michael; Sergeyev, Anton; Richter, Jessica; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke

Far-Field Imaging for Direct Visualization of Light Interferences in GaAs Nanowires

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American Chemical Society (ACS), 2012

Published in: Nano Letters
Sladek, Kamil; Winden, Andreas; Wirths, Stephan; Weis, Karl; Blömers, Christian; Gül, Önder; Grap, Thomas; Lenk, Steffi; von der Ahe, Martina; Weirich, Thomas E.; Hardtdegen, Hilde; Lepsa, Mihail Ion; Lysov, Andrey; Li, Zi‐An; Prost, Werner; Tegude, Franz‐Josef; Lüth, Hans; Schäpers, Thomas; Grützmacher, Detlev

Comparison of InAs nanowire conductivity: influence of growth method and structure

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Wiley, 2012

Published in: physica status solidi c

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