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  1. Cho, Hyun; Pearton, S. J.

    Removal of chemical–mechanical polishing-induced damage layer in single crystal La3Ga5SiO14 by inductively coupled plasma etching

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    American Vacuum Society, 2005

    Published in: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 23 (2005) 5, Seite 2236-2239

  2. Pearton, S. J.; Ren, F.

    GaN Electronics

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    Wiley, 2000

    Published in: Advanced Materials, 12 (2000) 21, Seite 1571-1580