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Afanas'ev, Valery V. [Author]

Internal photoemission spectroscopy : Fundamentals and recent advances - [Second edition]

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Amsterdam; Boston; Heidelberg: Elsevier, 2014
Afanasʹev, Valery V. [Author]

Internal photoemission spectroscopy : principles and applications - [1. ed.]

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Oxford; Heidelberg [u.a.]: Elsevier, 2008
Beethoven, Ludwig van [Author] ; Afanassiev, Valéry [Performer]

11 neue Bagatellen, Op. 119 (1 CD)

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[S.l.]: Denon, P 1988
Mozart, Wolfgang Amadeus [Author] ; Afanassiev, Valéry [Performer]

Fantasies KV 397, KV 396, KV 475 (1 CD)

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Ratingen: DENON Electronic, P 1995

Published in: MS Mastersonic
Mozart, Wolfgang Amadeus [Composer] ; Afanassiev, Valéry [Instrumentalist]; Afanassiev, Valéry [Writer of supplementary textual content]

Ich bin Mozart : Valery Afanassiev (1 CD)

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[Tokio]: Sony Music Japan International, [2016]

Published in: Sony classical
Schoenaers, Ben; Stesmans, Andre; Afanas’ev, Valery V.

Nitrogen acceptor in 2H-polytype synthetic MoS2 assessed by multifrequency electron spin resonance

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American Vacuum Society, 2018

Published in: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36 (2018) 5
Stesmans, Andre; Nguyen, Sang; Afanas'ev, Valery V

Invited; Nature of Point Defects at High-Mobility Semiconductor/Interfaces Probed by Electron Spin Resonance: Thermal GaAs/GaAs-Oxide Structures

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The Electrochemical Society, 2014

Published in: ECS Meeting Abstracts, MA2014-02 (2014) 31, Seite 1665-1665
Ciobanu, Florin; Pensl, Gerhard; Afanas'ev, Valery V.; Schöner, Adolf

Materials Science Forum: Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation

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Trans Tech Publications Ltd., 2005

Published in: Materials Science Forum (2005), Seite 693-696
Afanas’ev, Valery V; Delie, Gilles; Houssa, Michel; Shlyakhov, Ilya; Stesmans, Andre; Trepalin, Vadim

Band alignment at interfaces of two-dimensional materials: internal photoemission analysis

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IOP Publishing, 2020

Published in: Journal of Physics: Condensed Matter, 32 (2020) 41, Seite 413002
Houssa, Michel; Meng, Ruishen; Iordanidou, Konstantina; Pourtois, Geoffrey; Afanas'ev, Valery V.; Stesmans, Andre

(Invited) Stoner Ferromagnetism in Two-Dimensional Materials

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The Electrochemical Society, 2019

Published in: ECS Meeting Abstracts, MA2019-02 (2019) 13, Seite 873-873
Afanas'ev, Valery V.; Chiappe, Daniele; Leonhardt, Alessandra; Houssa, Michel; Huyghebaert, Cedric; Radu, Iuliana; Stesmans, Andre

(Invited) Internal Photoemission of Electrons from 2-Dimensional Semiconductors

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The Electrochemical Society, 2017

Published in: ECS Meeting Abstracts, MA2017-02 (2017) 14, Seite 836-836
Houssa, Michel; Iordanidou, Konstantina; Pourtois, Geoffrey; Afanas'ev, Valery V; Stesmans, Andre

Hole-Doping Induced Ferromagnetism in Monolayer SnO: A First-Principles Study

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The Electrochemical Society, 2017

Published in: ECS Meeting Abstracts, MA2017-02 (2017) 14, Seite 857-857
Kaviani, Moloud; Strand, Jack; Afanas'ev, Valery V.; Shluger, Alexander L.

Deep electron and hole polarons and bipolarons in amorphous oxide

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American Physical Society (APS), 2016

Published in: Physical Review B, 94 (2016) 2
El-Sayed, Al-Moatasem; Watkins, Matthew B.; Grasser, Tibor; Afanas’ev, Valery V.; Shluger, Alexander L.

Hydrogen-Induced Rupture of Strained Si─O Bonds in Amorphous Silicon Dioxide

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American Physical Society (APS), 2015

Published in: Physical Review Letters, 114 (2015) 11
El-Sayed, Al-Moatasem; Watkins, Matthew B.; Afanas'ev, Valery V.; Shluger, Alexander L.

Nature of intrinsic and extrinsic electron trapping in SiO2

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American Physical Society (APS), 2014

Published in: Physical Review B, 89 (2014) 12
Afanas'ev, Valery V; Wang, Wan Chih; Cerbu, Florin; Madia, Oreste; Houssa, Michel; Stesmans, Andre

Spectroscopy of Deep Gap States in High-k Insulators

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The Electrochemical Society, 2014

Published in: ECS Meeting Abstracts, MA2014-02 (2014) 44, Seite 2085-2085
Thoan, Nguyen Hoang; Stesmans, Andre; Nguyen, Anh Phuc Duc; Keunen, Koen; Afanas'ev, Valery V.

Chemical kinetics of the hydrogen-GePb1 defect interaction at the (100)GexSi1−x/SiO2 interface

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American Vacuum Society, 2013

Published in: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 31 (2013) 1
Afanas'ev, Valery V.; Chou, Hsing Yi; Houssa, Michel; Stesmans, Andre

Electron Band Alignment At Ge/Oxide and AIII-BV/Oxide Interfaces From Internal Photoemission Experiments

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The Electrochemical Society, 2013

Published in: ECS Meeting Abstracts, MA2013-02 (2013) 31, Seite 2185-2185
Houssa, Michel; Scalise, Emilio; van den Broek, Bas; Pourtois, Geoffrey; Afanas'ev, Valery V.; Stesmans, Andre

Interaction of Germanene With (0001)ZnSe Surfaces: A Theoretical Study

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The Electrochemical Society, 2013

Published in: ECS Meeting Abstracts, MA2013-02 (2013) 31, Seite 2164-2164
Frank, Thomas; Beljakowa, Svetlana; Pensl, Gerhard; Kimoto, Tsunenobu; Afanas'ev, Valery V.

Materials Science Forum: Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

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Trans Tech Publications Ltd., 2007

Published in: Materials Science Forum (2007), Seite 555-560

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