%0 Book
%T SiGe and Si strained-layer epitaxy for silicon heterostructure devices
%A Cressler, John D.
%I CRC Press
%@ 9781420066852
%@ 1420066854
%K Bipolar transistors Materials
%K Heterostructures
%K Silicon Electric properties
%K Epitaxy
%K Silicium
%K Heterostruktur-Bauelement
%K Germanium
%K Halbleiterbauelement
%K Bipolartransistor
%K Feldeffekttransistor
%K Optoelektronisches Bauelement
%D 2008
%X The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005
%X Includes bibliographical references and index
%C CRC Press
%C Boca Raton, Fla. [u.a.]
%U http://slubdd.de/katalog?TN_libero_mab2
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