%0 Generic
%T Boron penetration in p-channel metal–oxide–semiconductor field-effect transistors enhanced by gate ion-implantation damage
%A Aoyama, Takayuki
%A Suzuki, Kunihiro
%A Tashiro, Hiroko
%A Tada, Yoko
%A Arimoto, Hiroshi
%A Horiuchi, Kei
%I AIP Publishing
%@ 0021-8979
%@ 1089-7550
%K General Physics and Astronomy
%D 2001
%C AIP Publishing
%U http://slubdd.de/katalog?TN_libero_mab2
Download citation