%0 Generic
%T Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure
%A Ostermaier, Clemens
%A Lagger, Peter
%A Alomari, Mohammed
%A Herfurth, Patrick
%A Maier, David
%A Alexewicz, Alexander
%A Forte-Poisson, Marie-Antoinette di
%A Delage, Sylvain L.
%A Strasser, Gottfried
%A Pogany, Dionyz
%A Kohn, Erhard
%I Elsevier BV
%@ 0026-2714
%D 2012
%C Elsevier BV
%U http://slubdd.de/katalog?TN_libero_mab2
Download citation