%0 Generic
%T Surface Passivation of Boron-Diffused Junctions by a Borosilicate Glass and In Situ Grown Silicon Dioxide Interface Layer
%A Mihailetchi, Valentin D.
%A Chu, Haifeng
%A Lossen, Jan
%A Kopecek, Radovan
%I Institute of Electrical and Electronics Engineers (IEEE)
%@ 2156-3381
%@ 2156-3403
%D 2018
%C Institute of Electrical and Electronics Engineers (IEEE)
%U http://slubdd.de/katalog?TN_libero_mab2
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