Skip to contents Daumiller, Ingo Michael [Author] Herstellung und Charakterisierung von GaN-basierenden Heterostruktur-Feldeffekttransistoren Books View online Schließen > Access https://d-nb.info/1015470300/34 kostenfrei Show more show less Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. Ulm: Universität Ulm. Fakultät für Ingenieurwissenschaften, 2003 Huber, Martin; Daumiller, Ingo; Andreev, Andrei; Silvestri, Marco; Knuuttila, Lauri; Lundskog, Anders; Wahl, Michael; Kopnarski, Michael; Bonanni, Alberta Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. AIP Publishing, 2016 Published in: Journal of Applied Physics
Daumiller, Ingo Michael [Author] Herstellung und Charakterisierung von GaN-basierenden Heterostruktur-Feldeffekttransistoren Books View online Schließen > Access https://d-nb.info/1015470300/34 kostenfrei Show more show less Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. Ulm: Universität Ulm. Fakultät für Ingenieurwissenschaften, 2003
Huber, Martin; Daumiller, Ingo; Andreev, Andrei; Silvestri, Marco; Knuuttila, Lauri; Lundskog, Anders; Wahl, Michael; Kopnarski, Michael; Bonanni, Alberta Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. AIP Publishing, 2016 Published in: Journal of Applied Physics
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