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  1. Baliga, B. Jayant [Author]

    Gallium nitride and silicon carbide power devices

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    New Jersey; London; Singapore; Beijing; Shanghai; Hong Kong; Taipei; Chennai; Tokyo: World Scientific, [2017]

  2. Medjdoub, Farid [Editor]; Iniewski, Krzysztof [Editor]

    Gallium Nitride (GaN) : physics, devices, and technology

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    Boca Raton; London; New York: CRC Press, Taylor & Francis Group, [2016]

    Published in: Devices, circuits, and systems- Engineering - electrical

  3. Kuball, Martin [Other] ; Symposium GaN, Aln, InN and Related Materials 2005 Boston, Mass

    GaN, AlN, InN and related materials : symposium held November 28 - December 2, 2005, Boston, Massachusetts, U.S.A. ; [Symposium FF... held ... at the 2005 MRS fall meeting]

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    Warrendale, Pa.: Materials Research Society, 2006

    Published in: Materials Research Society: Materials Research Society symposium proceedings ; 89200

  4. Rahman, SK. Shaid-Ur [Other]; Leute, Robert Anton Richard [Other]; Wang, Junjun [Other]; Meisch, Tobias [Other]; Klein, Martin [Other]; Scholz, Ferdinand [Other]; Koyama, Koji [Other]; Ishii, Miho [Other]; Takeda, Hidetoshi [Other]

    LEDs on HVPE grown GaN substrates: influence of macroscopic surface features

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    Ulm: Universität Ulm, Fakultät für Ingenieurwissenschaften und Informatik, 2014

  5. Strang, Benjamin Simon [Author]

    Fabrication and characterization of gallium nitride based high electron mobility transistors for mm-wave applications = Herstellung und Charakterisierung von Gallium-Nitrid-basierten High-Electron-Mobility-Transistoren für mm-Wellen-Anwendungen

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    Aachen: Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2012

  6. Brackmann, Stefan [Author] ; Kowalsky, Wolfgang [Degree supervisor]; Waag, Andreas [Degree supervisor]; Grahn, Holger [Degree supervisor]

    Effects and Application of Phosphonic Passivation on Gallium Nitride Using a Continuous Series of Modifiers

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    Braunschweig: Technische Universität Braunschweig, 2023