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  1. Huang, J.; Kirsch, P.D.; Jungwoo Oh; Se Hoon Lee; Majhi, P.; Harris, H.R.; Gilmer, D.C.; Bersuker, G.; Dawei Heh; Chang Seo Park; Park, C.; Hsing-Huang Tseng; Jammy, R.

    Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe

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    Institute of Electrical and Electronics Engineers (IEEE), 2009

    Published in: IEEE Electron Device Letters

  2. Gilmer, D. C.; Hegde, R.; Cotton, R.; Garcia, R.; Dhandapani, V.; Triyoso, D.; Roan, D.; Franke, A.; Rai, R.; Prabhu, L.; Hobbs, C.; Grant, J. M.; La, L.; Samavedam, S.; Taylor, B.; Tseng, H.; Tobin, P.

    Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

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    AIP Publishing, 2002

    Published in: Applied Physics Letters

  5. Hobbs, C.C.; Fonseca, L.R.C.; Knizhnik, A.; Dhandapani, V.; Samavedam, S.B.; Taylor, W.J.; Grant, J.M.; Dip, L.G.; Triyoso, D.H.; Hegde, R.I.; Gilmer, D.C.; Garcia, R.; Roan, D.; Lovejoy, M.L.; Rai, R.S.; Hebert, E.A.; Tseng, H.-H.; Anderson, S.G.H.; White, B.E.; Tobin, P.J.

    Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

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    Institute of Electrical and Electronics Engineers (IEEE), 2004

    Published in: IEEE Transactions on Electron Devices

  6. Hobbs, C.C.; Fonseca, L.R.C.; Knizhnik, A.; Dhandapani, V.; Samavedam, S.B.; Taylor, W.J.; Grant, J.M.; Dip, L.G.; Triyoso, D.H.; Hegde, R.I.; Gilmer, D.C.; Garcia, R.; Roan, D.; Lovejoy, M.L.; Rai, R.S.; Hebert, E.A.; Tseng, H.-H.; Anderson, S.G.H.; White, B.E.; Tobin, P.J.

    Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

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    Institute of Electrical and Electronics Engineers (IEEE), 2004

    Published in: IEEE Transactions on Electron Devices

  7. Schaeffer, J. K.; Samavedam, S. B.; Gilmer, D. C.; Dhandapani, V.; Tobin, P. J.; Mogab, J.; Nguyen, B.-Y.; White, B. E.; Dakshina-Murthy, S.; Rai, R. S.; Jiang, Z.-X.; Martin, R.; Raymond, M. V.; Zavala, M.; La, L. B.; Smith, J. A.; Garcia, R.; Roan, D.; Kottke, M.; Gregory, R. B.

    Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

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    American Vacuum Society, 2003

    Published in: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

  8. Tiegs, Scott D.; Costello, David M.; Isken, Mark W.; Woodward, Guy; McIntyre, Peter B.; Gessner, Mark O.; Chauvet, Eric; Griffiths, Natalie A.; Flecker, Alex S.; Acuña, Vicenç; Albariño, Ricardo; Allen, Daniel C.; Alonso, Cecilia; Andino, Patricio; Arango, Clay; Aroviita, Jukka; Barbosa, Marcus V. M.; Barmuta, Leon A.; Baxter, Colden V.; Bell, Thomas D. C.; Bellinger, Brent; Boyero, Luz; Brown, Lee E.; Bruder, Andreas; [...]

    Global patterns and drivers of ecosystem functioning in rivers and riparian zones

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    American Association for the Advancement of Science (AAAS), 2019

    Published in: Science Advances