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  1. Baburske, Roman [Author] ; Lutz, Josef [Degree supervisor]; Lutz, Josef [Other]; Eckel, Hans-Günter [Other]; Niedernostheide, Franz-Josef [Other]

    Dynamik des Ladungsträgerplasmas während des Ausschaltens bipolarer Leistungsdioden

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    Chemnitz: Universitätsbibliothek Chemnitz; Chemnitz: Universitätsverlag der Technischen Universität Chemnitz, 2011

  2. Tran, Quang Tien [Author] ; Eckel, Hans-Günter [Degree supervisor]; Kaminski, Nando [Degree supervisor]; Baburske, Roman [Degree supervisor] Universität Rostock, Universität Rostock Fakultät für Informatik und Elektrotechnik

    Rückwärts leitfähiger IGBT mit nahezu von der Gate-Emitter-Spannung unabhängiger Diodencharakteristik

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    Rostock: Universität, 2020

  3. Peftitsis, Dimosthenis; Baburske, Roman; Rabkowski, Jacek; Lutz, Josef; Tolstoy, Georg; Nee, Hans-Peter

    Challenges Regarding Parallel Connection of SiC JFETs

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    Institute of Electrical and Electronics Engineers (IEEE), 2013

    Published in: IEEE Transactions on Power Electronics, 28 (2013) 3, Seite 1449-1463

  4. Lutz, Josef; Baburske, Roman; Chen, Min; Heinze, Birk; Domeij, Martin; Felsl, Hans-Peter; Schulze, Hans-Joachim

    The $\hbox{nn}^{+}$-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes

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    Institute of Electrical and Electronics Engineers (IEEE), 2009

    Published in: IEEE Transactions on Electron Devices, 56 (2009) 11, Seite 2825-2832

  5. Mysore, Madhu Lakshman; Bhojani, Riteshkumar; Kowalsky, Jens; Lutz, Josef; Baburske, Roman; Schulze, Hans‐Joachim; Niedernostheide, Franz‐Josef

    Al modification as indicator of current filaments in IGBTs under repetitive SC operation

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    Institution of Engineering and Technology (IET), 2019

    Published in: IET Power Electronics, 12 (2019) 15, Seite 3893-3902

  6. Basler, Thomas; Pfaffenlehner, Manfred; Felsl, Hans Peter; Niedernostheide, Franz‐Josef; Pfirsch, Frank; Schulze, Hans‐Joachim; Baburske, Roman; Lutz, Josef

    Switching ruggedness and surge‐current capability of diodes using the self‐adjusting p emitter efficiency diode concept

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    Institution of Engineering and Technology (IET), 2014

    Published in: IET Circuits, Devices & Systems, 8 (2014) 3, Seite 205-212