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Maier, David [Other]; Kaiser, Ute [Other]; Troadec, David [Other]; Gaquière, Christophe [Other]; Alomari, Mohammed [Other]; Kohn, Erhard [Other]; Diforte-Poisson, Marie-Antoinette [Other]; Dua, Christian [Other]; Delage, Sylvain L. [Other]; Grandjean, Nicolas [Other]; Carlin, Jean-Franç̧ois [Other]; Chuvilin, Andrey [Other]

High temperature stability of nitride-based power HEMTs

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Ulm: Universität Ulm. Fakultät für Ingenieurwissenschaften und Informatik, 2011
Maier, David [Other]; Kaiser, Ute [Other]; Delage, Sylvain L. [Other]; Kohn, Erhard [Other]; Alomari, Mohammed [Other]; Grandjean, Nicolas [Other]; Carlin, Jean-Franç̧ois [Other]; Diforte-Poisson, Marie-Antoinette [Other]; Dua, Christian [Other]; Chuvilin, Andrey [Other]; Troadec, David [Other]; Gaquière, Christophe [Other]

Testing the temperature limits of GaN-based HEMT devices

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Ulm: Universität Ulm. Fakultät für Ingenieurwissenschaften und Informatik, 2011
Alim, Mohammad Abdul; Gaquiere, Christophe; Crupi, Giovanni

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

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MDPI AG, 2021

Published in: Micromachines, 12 (2021) 5, Seite 549
Gamand, Florent; Li, Ming Dong; Gaquiere, Christophe

A 10-MHz GaN HEMT DC/DC Boost Converter for Power Amplifier Applications

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Institute of Electrical and Electronics Engineers (IEEE), 2012

Published in: IEEE Transactions on Circuits and Systems II: Express Briefs, 59 (2012) 11, Seite 776-779
Strenaer, Raphaël; Guhel, Yannick; Gaquière, Christophe; Boudart, Bertrand

Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

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Wiley, 2024

Published in: physica status solidi (a), 221 (2024) 3
Alim, Mohammad Abdul; Jarndal, Anwar; Gaquiere, Christophe; Crupi, Giovanni

A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures

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Springer Science and Business Media LLC, 2023

Published in: Journal of Materials Science: Materials in Electronics, 34 (2023) 10
Islam, Shariful; Alim, Mohammad Abdul; Chowdhury, Abu Zahed; Gaquiere, Christophe

Modeling of access resistances and channel temperature estimation for GaN HEMT

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Springer Science and Business Media LLC, 2022

Published in: Journal of Thermal Analysis and Calorimetry, 147 (2022) 20, Seite 10991-10998
Alaji, Issa; Lepilliet, Sylvie; Gloria, Daniel; Ducournau, Guillaume; Gaquiere, Christophe

Design and Characterization of (140–220) GHz Frequency Compensated Power Detector

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Institute of Electrical and Electronics Engineers (IEEE), 2021

Published in: IEEE Transactions on Microwave Theory and Techniques, 69 (2021) 4, Seite 2352-2356
Alim, Mohammad A.; Ali, Mayahsa M.; Gaquiere, Christophe

Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs

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Hindawi Limited, 2021

Published in: International Journal of RF and Microwave Computer-Aided Engineering, 31 (2021) 2
Gassoumi, Moujahed; Helali, Abdelhamid; Gassoumi, Malek; Gaquiere, Christophe; Maaref, Hassen

High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation

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Springer Science and Business Media LLC, 2019

Published in: Silicon, 11 (2019) 1, Seite 557-562
Alim, Mohammad A; Rezazadeh, Ali A; Gaquiere, Christophe; Crupi, Giovanni

Thermal influence on S22 kink behavior of a 0.15 μm gate length AlGaN/GaN/SiC HEMT for microwave applications

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IOP Publishing, 2019

Published in: Semiconductor Science and Technology, 34 (2019) 3, Seite 035002
Alim, Mohammad A; Rezazadeh, Ali A; Gaquiere, Christophe; Crupi, Giovanni

Extrinsic capacitance extraction for GaAs and GaN FETs from low to high temperatures

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IOP Publishing, 2018

Published in: Semiconductor Science and Technology, 33 (2018) 8, Seite 085007
Alim, Mohammad A; Rezazadeh, Ali A; Gaquiere, Christophe

Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors

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IOP Publishing, 2016

Published in: Semiconductor Science and Technology, 31 (2016) 12, Seite 125016
Alim, Mohammad Abdul; Rezazadeh, Ali A.; Gaquiere, Christophe

Temperature Effect on DC and Equivalent Circuit Parameters of 0.15- $\mu \text{m}$ Gate Length GaN/SiC HEMT for Microwave Applications

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Institute of Electrical and Electronics Engineers (IEEE), 2016

Published in: IEEE Transactions on Microwave Theory and Techniques, 64 (2016) 11, Seite 3483-3491
Alim, Mohammad A; Rezazadeh, Ali A; Gaquiere, Christophe

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

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IOP Publishing, 2015

Published in: Semiconductor Science and Technology, 30 (2015) 12, Seite 125005
Aouladhadj, Driss; Kpre, Ettien; Deniau, Virginie; Kharchouf, Aymane; Gransart, Christophe; Gaquière, Christophe

Drone Detection and Tracking Using RF Identification Signals

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MDPI AG, 2023

Published in: Sensors, 23 (2023) 17, Seite 7650
Theveneau, Hadrien; Gaquiere, Christophe; Lenglet, Romain; Werquin, Matthieu; Joly, Jean-Christophe; Tortel, Stephane

Spatial Power Combiner With Low-Impedance Inputs and Increased Isolation

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Institute of Electrical and Electronics Engineers (IEEE), 2017

Published in: IEEE Microwave and Wireless Components Letters, 27 (2017) 11, Seite 956-958
Jui, Fahmida Sharmin; Alam, Sabrina; Jarndal, Anwar; Gaquiere, Christophe; Alim, Mohammad A.

Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT

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Springer Science and Business Media LLC, 2024

Published in: Journal of Computational Electronics, 23 (2024) 1, Seite 42-50
Pitaval, Charles; Lacam, Cédric; Defrance, Nicolas; Gaquière, Christophe; Michel, Nicolas; Parillaud, Olivier; Delage, Sylvain L.

Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors

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Wiley, 2023

Published in: physica status solidi (a), 220 (2023) 16
Saadi, Abdelhalim A.; Margalef‐Rovira, Marc; Amara, Youcef; Vincent, Loïc; Lepilliet, Sylvie; Gaquiere, Christophe; Ferrari, Philippe

Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components

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Institution of Engineering and Technology (IET), 2022

Published in: IET Microwaves, Antennas & Propagation, 16 (2022) 7, Seite 477-488

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