Skip to contents

Amelinckx, S [Contributor]; Andkeev, G. A [Contributor]; Antonov, V. A [Contributor]; Arsenev, P . A [Contributor]; Balbashov, A.M [Contributor]; Belozerskii, G. N [Contributor]; Bengtjigui, L [Contributor]; Bicknell, R. W [Contributor]; Bieganski, Z [Contributor]; Blinc, R [Contributor]; Bloob, D [Contributor]; Bobukhovich, A. S [Contributor]; Boisson, M [Contributor]; Britov, A . D [Contributor]; Bublik, V. T [Contributor]; Bulatova, T. M [Contributor]; Buxo, J [Contributor]; Catlow, C. R . A [Contributor]; Chervonenkis, A. Ya [Contributor]; Chovet, A [Contributor]; Corner, W. D [Contributor]; Crawford, R . K [Contributor]; Cristoloveanu, S [Contributor]; Denanot, M. F [Contributor]; [...]

Physica status solidi : Volume 46, Number 1: March 16 - [Reprint 2021]

View online
Schließen

Access

... to E-book via De Gruyter

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Berlin; Boston: De Gruyter, [2022] ; [Online-Ausgabe]

Published in: Physica status solidi ; Volume 46, Number 1 ; A
Andreev, G. A [Contributor]; Antonov, V. A [Contributor]; Arsenev, P. A [Contributor]; Balbashov, A.M [Contributor]; Belozerskii, G. N [Contributor]; Benguigui, L [Contributor]; Bicknell, R. W [Contributor]; Biegański, Z [Contributor]; Blinc, R [Contributor]; Bloor, D [Contributor]; Boisson, M [Contributor]; Borukhovich, A. S [Contributor]; Bublik, V. T [Contributor]; Bulatova, T. M [Contributor]; Buxo, J [Contributor]; Catlow, C. R. A [Contributor]; Chervonenkis, A. Ya [Contributor]; Chovet, A [Contributor]; Crawford, R. K [Contributor]; Cristoloveanu, S [Contributor]; Denanot, M. F [Contributor]; Dmitriev, A. P [Contributor]; Drulis, M [Contributor]; Elango, M [Contributor]; [...]

Physica status solidi : Volume 46, Number 1: March 16 - [Reprint 2021]

View online
Schließen

Access

... to E-book via De Gruyter

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Berlin; Boston: De Gruyter, [2021] ; [Online-Ausgabe]

Published in: Physica status solidi ; Volume 46, Number 1 ; A
Pananakakis, G.; Kamarinos, G.

Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Elsevier BV, 1986

Published in: Surface Science, 168 (1986) 1-3, Seite 657-664
Pananakakis, G.; Kamarinos, G.

Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Elsevier BV, 1986

Published in: Surface Science Letters, 168 (1986) 1-3, Seite A137
Ghibaudo, G.; Kamarinos, G.

Thermopower of a quasi‐two‐dimensional electron gas

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Wiley, 1982

Published in: physica status solidi (b), 114 (1982) 2
Viktorovitch, P.; Kamarinos, G.

Improvement of the photovoltaic efficiency of a metal-insulator-semiconductor structure: Influence of interface states

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

AIP Publishing, 1977

Published in: Journal of Applied Physics, 48 (1977) 7, Seite 3060-3064
Viktorovitch, P; Kamarinos, G

The chemical theory of the minority carrier injection ratio in a real Schottky diode

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

IOP Publishing, 1975

Published in: Journal of Physics D: Applied Physics, 8 (1975) 3, Seite 246-253
Kamarinos, G.; Diouri, M.

Lois des mobilités dans le germanium entre 300 et 700 K. Influence des centres ionisés

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Wiley, 1975

Published in: Physica Status Solidi (a), 32 (1975) 2, Seite K101-K104
Viktorovitch, P.; Kamarinos, G.

Thermodynamic conditions for the validity of the thermionic emission-diffusion theory of Schottky diodes

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Elsevier BV, 1976

Published in: Solid-State Electronics, 19 (1976) 12, Seite 1041-1042
Viktorovitch, P.; Kamarinos, G.

Negative resistance phenomenon in a semiconductor with deep centres changed into traps by magneto-depletion effect

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Wiley, 1973

Published in: Physica Status Solidi (a), 16 (1973) 1, Seite 219-224
Kamarinos, G.; Zachariadès, M.

Self-Magnetoconcentration Effect in Intrinsic Semiconductors

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

AIP Publishing, 1972

Published in: Journal of Applied Physics, 43 (1972) 4, Seite 1983-1984
Ghibaudo, G; Jaouen, H; Kamarinos, G

Integration Density Limitation in 3D Integrated Circuits due to Heat Dissipation

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

IOP Publishing, 1986

Published in: Europhysics Letters (EPL), 2 (1986) 3, Seite 209-211
El-Sayed, M.; Pananakakis, G.; Kamarinos, G.

Complete exploration of the silicon gap at the SiSiO2 interface of MIS tunnel diodes using the conductance technique at various temperatures and illumination levels

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Elsevier BV, 1985

Published in: Solid-State Electronics, 28 (1985) 4, Seite 345-357
Fargeix, A.; Ghibaudo, G.; Kamarinos, G.

A revised analysis of dry oxidation of silicon

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

AIP Publishing, 1983

Published in: Journal of Applied Physics, 54 (1983) 5, Seite 2878-2880
Dimitriadis, C.A.; Kamarinos, G.; Brini, J.

Leakage current of offset gate p- and n-channel excimer laser annealed polycrystalline silicon thin-film transistors

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Elsevier BV, 2001

Published in: Solid-State Electronics, 45 (2001) 2, Seite 365-368
Dimitriadis, C.A.; Kamarinos, G.; Brini, J.

Model of low frequency noise in polycrystalline silicon thin-film transistors

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Institute of Electrical and Electronics Engineers (IEEE), 2001

Published in: IEEE Electron Device Letters, 22 (2001) 8, Seite 381-383
Danel, A.; Tardif, F.; Kamarinos, G.

Surface dopant concentration measurement using the Surface Charge Profiler (SCP) method: characterization of hydrogen and metallic contamination in silicon

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Elsevier BV, 1999

Published in: Materials Science and Engineering: B, 58 (1999) 1-2, Seite 64-70
Dimitriadis, C. A.; Brini, J.; Kamarinos, G.

Low-frequency noise of the leakage current in undoped low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

AIP Publishing, 1997

Published in: Applied Physics Letters, 70 (1997) 7, Seite 880-882
Walz, D.; My, J. -P.; Kamarinos, G.

On the recombination behaviour of iron in moderately boron-doped p-type silicon

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Springer Science and Business Media LLC, 1996

Published in: Applied Physics A Materials Science & Processing, 62 (1996) 4, Seite 345-353
Walz, D.; Joly, J.-P.; Kamarinos, G.

On the recombination behaviour of iron in moderately boron-doped p-type silicon

View online
Schließen

Access

Close

Bookmarks

You can manage bookmarks using lists, please log in to your user account for this.

Springer Science and Business Media LLC, 1996

Published in: Applied Physics A: Materials Science & Processing, 62 (1996) 4, Seite 345-353

You did not find what you were looking for?

Purchase suggestion
Are you missing something you need for your research? If you have any suggestions please share them here.

Interlibrary Loan
Please search and order your favorite title in the Interlibrary Loan Portal.

Search in field:

Recently searched for:

You did not find what you were looking for?

> Year of publication

Year of publication