Zimmermann, F.
[Author];
Gärtner, G.
[Author];
Sträter, H.
[Author];
Röder, C.
[Author];
Barchuk, M.
[Author];
Bastin, D.
[Author];
Hofmann, P.
[Author];
Krupinski, M.
[Author];
Mikolajick, T.
[Author];
Heitmann, J.
[Author];
Beyer, F. C.
[Author]
Green coloring of GaN single crystals introduced by Cr impurity
You can manage bookmarks using lists, please log in to your user account for this.
Media type:
E-Article
Title:
Green coloring of GaN single crystals introduced by Cr impurity
Contributor:
Zimmermann, F.
[Author];
Gärtner, G.
[Author];
Sträter, H.
[Author];
Röder, C.
[Author];
Barchuk, M.
[Author];
Bastin, D.
[Author];
Hofmann, P.
[Author];
Krupinski, M.
[Author];
Mikolajick, T.
[Author];
Heitmann, J.
[Author];
Beyer, F. C.
[Author]
Footnote:
Hinweis: Link zum Artikel, der zuerst in der Zeitschrift 'Journal of Luminescence' bei Elsevier erschienen ist DOI: https://doi.org/10.1016/j.jlumin.2018.11.044
Description:
In this study unintentionally doped GaN grown by hydride vapor phase epitaxy that exhibits a sharply delimited region of green color was investigated. Optical analysis was performed by absorption and photoluminescence spectroscopy. An absorption band between 1.5 and 2.0 eV was found to be responsible for the green color and was related to a sharp emission at 1.193 eV by luminescence and excitation spectroscopy. The appearance of both optical signatures in the region of green color was related to an increase of Cr contamination detected by secondary ion mass spectrometry. We propose that the origin of green color as well as the emission line at 1.193 eV is attributed to internal transitions of Cr⁴⁺.