Killat, N.;
Montes Bajo, M.;
Paskova, T.;
Evans, K. R.;
Leach, J.;
Li, X.;
Özgür, Ü.;
Morkoç, H.;
Chabak, K. D.;
Crespo, A.;
Gillespie, J. K.;
Fitch, R.;
Kossler, M.;
Walker, D. E.;
Trejo, M.;
Via, G. D.;
Blevins, J. D.;
Kuball, M.
Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
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Media type:
E-Article
Title:
Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
Contributor:
Killat, N.;
Montes Bajo, M.;
Paskova, T.;
Evans, K. R.;
Leach, J.;
Li, X.;
Özgür, Ü.;
Morkoç, H.;
Chabak, K. D.;
Crespo, A.;
Gillespie, J. K.;
Fitch, R.;
Kossler, M.;
Walker, D. E.;
Trejo, M.;
Via, G. D.;
Blevins, J. D.;
Kuball, M.