• Media type: E-Article
  • Title: Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
  • Contributor: Killat, N.; Montes Bajo, M.; Paskova, T.; Evans, K. R.; Leach, J.; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.; Kuball, M.
  • Source: Applied Physics Letters ; 103 ( 2013 ) S. 193507
  • Published: AIP Publishing, 2013
  • Language: English
  • DOI: 10.1063/1.4829062
  • ISSN: 0003-6951; 1077-3118
  • Keywords: Physics and Astronomy (miscellaneous)
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