Description:
<jats:title>Abstract</jats:title><jats:p>An 86 to 94 GHz balanced resistive mixer (BRM) is presented using a 65 nm complementary metal‐oxide‐semiconductor (CMOS) process. We minimize parasitic losses which are serious at high frequency by adopting symmetric transistor structures. A low loss 180° hybrid is implemented using an asymmetric broadside coupler and delay lines. This allows low‐loss implementation of 86 to 94 GHz BRMs, which represent a conversion loss of 10.3 to 13.0 dB from 86 to 94 GHz of RF frequencies. The balanced designs produce LO‐to‐RF isolations of 32 to 36 dB from 87 to 93 GHz. The proposed CMOS BRM shows competitive results when compared to GaAs‐ or InP‐based balanced resistive mixers having moderate LO power requirements.</jats:p>