Description:
AbstractThe heat capacities of a number of semiconducting substances (Si, GaAs, GaP, etc.) have been calculated on the basis of the quasi‐chain dynamics of covalent crystals [9]. It is shown that the characteristic frequencies v3 and v1 correspond to the respective dispersion frequencies at the points Γ(0, 0, 0), X(1, 0, 0), and L(0.5, 0.5, 0.5) of the Brillouin zone determined from the inelastic scattering of slow neutrons, and that it is possible to calculate the parameters ϑ1 and ϑ3 from the data of multi‐phonon absorption. The heat capacities of GaP, measured in the range 55 to 300°K, are given.