Media type: E-Article Title: A new approach to extract the threshold voltage of MOSFETs Contributor: Ortiz-Conde, A.; Gouveia Fernandes, E.D.; Liou, J.; Rofiqul Hassan, M.; Garcia-Sanchez, F.J.; de Mercato, G.; Waisum Wong imprint: Institute of Electrical and Electronics Engineers (IEEE), 1997 Published in: IEEE Transactions on Electron Devices Language: Not determined DOI: 10.1109/16.622610 ISSN: 0018-9383 Keywords: Electrical and Electronic Engineering ; Electronic, Optical and Magnetic Materials Origination: Footnote: