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Media type:
E-Article
Title:
Effects of nitrogen doping of ZnO during or after deposition
Contributor:
Yen, Tingfang;
DiNezza, Michael;
Haungs, Alan;
Kim, Sung Jin;
Anderson, Wayne A.;
Cartwright, Alexander N.
Published:
American Vacuum Society, 2009
Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 27 (2009) 4, Seite 1943-1948
Language:
English
DOI:
10.1116/1.3167363
ISSN:
1071-1023;
1520-8567
Origination:
Footnote:
Description:
Effects of nitrogen doping of ZnO (ZnO:N) during deposition and after postdeposition annealing have been studied by optical techniques, electronic properties, and the application to metal-semiconductor-metal photodetectors (MSM-PDs). Films of ZnO, nitrogen doped during rf sputtering, show larger grain size, narrower full width at half maximum, band gap emission shift in photoluminescence, and higher conductivity. Postannealing has been studied using tube furnace and rapid thermal annealing in nitrogen. These annealing methods not only reconstruct the lattice structure but also activate the nitrogen in the film to improve the conductivity of the film. The MSM-PDs having high photo to dark current ratio of 104 and responsive (R) of 1.79 A/W have been fabricated with those films.