• Media type: E-Article
  • Title: Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates
  • Contributor: Tapajna, M.; Killat, N.; Moereke, J.; Paskova, T.; Evans, K. R.; Leach, J.; Li, X.; Ozgur, Ü; Morkoc, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.; Kuball, M.
  • Published: IEEE, 2012
  • Language: English
  • DOI: 10.1109/LED.2012.2199278
  • ISSN: 0741-3106; 1558-0563
  • Keywords: Gallium nitride ; HEMTs ; MODFETs ; Degradation ; Logic gates ; Aluminum gallium nitride ; Substrates ; reliability ; AlGaN/GaN HEMT ; bulk GaN ; electrical stress ; electroluminescence (EL)
  • Abstract: The reliability of AlGaN/GaN HEMTs processed on bulk GaN substrates was studied using electrical and optical methods, showing a decreasing degradation with increasing baseplate temperature (T<sub>b</sub>). Generation of traps spatially located in both intrinsic and extrinsic HEMT regions was found to be most pronounced for OFF-state bias stress performed at room T<sub>b</sub>, while increasing T<sub>b</sub> up to 150&#x00B0;C decreased trap generation underneath the gate perimeter. This was attributed to degradation driven by hot electrons as it should dominate over defect-related degradation mechanisms in GaN-on-GaN devices.
  • Description: The reliability of AlGaN/GaN HEMTs processed on bulk GaN substrates was studied using electrical and optical methods, showing a decreasing degradation with increasing baseplate temperature (T<sub>b</sub>). Generation of traps spatially located in both intrinsic and extrinsic HEMT regions was found to be most pronounced for OFF-state bias stress performed at room T<sub>b</sub>, while increasing T<sub>b</sub> up to 150&#x00B0;C decreased trap generation underneath the gate perimeter. This was attributed to degradation driven by hot electrons as it should dominate over defect-related degradation mechanisms in GaN-on-GaN devices.
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