@misc
{TN_libero_mab2,
author = {
Tapajna, M.
AND
Killat, N.
AND
Moereke, J.
AND
Paskova, T.
AND
Evans, K. R.
AND
Leach, J.
AND
Li, X.
AND
Ozgur, Ü
AND
Morkoc, H.
AND
Chabak, K. D.
AND
Crespo, A.
AND
Gillespie, J. K.
AND
Fitch, R.
AND
Kossler, M.
AND
Walker, D. E.
AND
Trejo, M.
AND
Via, G. D.
AND
Blevins, J. D.
AND
Kuball, M.
},
title = {
Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates
},
publisher = {IEEE},
isbn = {0741-3106},
isbn = {1558-0563},
keywords = {
Gallium nitride
,
HEMTs
,
MODFETs
,
Degradation
,
Logic gates
,
Aluminum gallium nitride
,
Substrates
,
reliability
,
AlGaN/GaN HEMT
,
bulk GaN
,
electrical stress
,
electroluminescence (EL)
},
year = {2012},
url = {
http://slubdd.de/katalog?TN_libero_mab2
}
}