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Ivo, Ponky [Author] ; Tränkle, Günther [Degree supervisor]

AlGaN/GaN HEMTs Reliability: Degradation Modes and Analysis / AlGaN/GaN HEMTs Reliability: Degradation Modes and Analysis

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Berlin: Universitätsbibliothek der Technischen Universität Berlin, 2012
Müntze, Gesche Mareike [Author]

Enzyme-modified solution-gated AlGaN/GaN field-effect transistors for quantitative analysis of covalently immobilized enzymes / Enzyme-modified solution-gated AlGaN/GaN field-effect transistors for quantitative analysis of covalently immobilized enzymes

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Gießen: Universitätsbibliothek, 2016
Schmid, Alexander [Author] ; Heitmann, Johannes [Degree supervisor]; Heitmann, Johannes [Other]; Mikolajick, Thomas [Other] Technische Universität Bergakademie Freiberg

Untersuchungen zu Vanadium-basierten ohmschen Kontakten in AlGaN/GaN-MISHFETs / Untersuchungen zu Vanadium-basierten ohmschen Kontakten in AlGaN/GaN-MISHFETs

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Freiberg: Technische Universität Bergakademie Freiberg, 2020
Kühn, Jutta [Author] ; Thumm, M. [Degree supervisor]

AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications / AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

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Karlsruhe: KIT Scientific Publishing, 2011

Published in: Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik ; 62
Desmaris, V.; Rudzinski, M.; Rorsman, N.; Hageman, P.R.; Larsen, P.K.; Zirath, H.; Rodle, T.C.; Jos, H.F.F.

Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

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IEEE, 2006

Published in: IEEE Transactions on Electron Devices
Xing Lu; Jun Ma; Yue, C. P.; Kei May Lau

A GaN-Based Lamb-Wave Oscillator on Silicon for High-Temperature Integrated Sensors

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IEEE, 2013

Published in: IEEE Microwave and Wireless Components Letters
Tierney, Brian D.; Choi, Sukwon; DasGupta, Sandeepan; Dickerson, Jeramy R.; Reza, Shahed; Kaplar, Robert J.; Baca, Albert G.; Marinella, Matthew J.

Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime

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IEEE, 2017

Published in: IEEE Transactions on Electron Devices
Liu, Shih-Chien; Huang, Chung-Kai; Chang, Chia-Hua; Lin, Yueh-Chin; Chen, Bo-Yuan; Tsai, Szu-Ping; Majlis, Burhanuddin Yeop; Dee, Chang-Fu; Chang, Edward Yi

Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

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IEEE, 2017

Published in: IEEE Journal of the Electron Devices Society
Soni, Ankit; Ajay; Shrivastava, Mayank

Novel Drain-Connected Field Plate GaN HEMT Designs for Improved VBD–RON Tradeoff and RF PA Performance

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IEEE, 2020

Published in: IEEE Transactions on Electron Devices
Sharma, Chandan; Modolo, Nicola; Wu, Tian-Li; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Visvkarma, Ajay Kumar; Vinayak, Seema; Singh, Rajendra

Understanding $\gamma$ -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model

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IEEE, 2020

Published in: IEEE Transactions on Electron Devices
Cheng, Qi; Yang, Zhenchuan; Wang, Maojun; Tao, Ming; Yin, Ruiyuan; Li, Yue; Yang, Nana; Xu, Wenhua; Gao, Chengchen; Hao, Yilong

Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities

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IEEE, 2020

Published in: IEEE Electron Device Letters
Wu, Chunlei; Ye, Hansheng; Shaju, Nikhita; Smith, Jeffrey; Grisafe, Benjamin; Datta, Suman; Fay, Patrick

Hf0.5Zr0.5O2-Based Ferroelectric Gate HEMTs With Large Threshold Voltage Tuning Range

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IEEE, 2020

Published in: IEEE Electron Device Letters
Yang, Feiyuan; Dalcanale, Stefano; Gajda, Mark; Karboyan, Serge; Uren, Michael J.; Kuball, Martin

The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs

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IEEE, 2020

Published in: IEEE Transactions on Electron Devices
Ting-Fu Chang; Tsung-Chieh Hsiao; Chih-Fang Huang; Wei-Hung Kuo; Suh-Fang Lin; Samudra, Ganesh S.; Liang, Yung C.

Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

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IEEE, 2015

Published in: IEEE Transactions on Electron Devices
Huolin Huang; Liang, Yung C.; Samudra, Ganesh S.; Ngo, Cassandra Low Lee

Au-Free Normally-Off AlGaN/GaN-on-Si MIS-HEMTs Using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures

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IEEE, 2014

Published in: IEEE Electron Device Letters
Puzyrev, Yevgeniy; Paccagnella, Alessandro; Pantelides, Sokrates T.; Mukherjee, Shubhajit; Chen, Jin; Roy, Tania; Silvestri, Marco; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Singh, Jasprit; Hinckley, John M.

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

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IEEE, 2014

Published in: IEEE Transactions on Electron Devices
Waller, William M.; Uren, Michael J.; Kean Boon Lee; Houston, Peter A.; Wallis, David J.; Guiney, Ivor; Humphreys, Colin J.; Pandey, Saurabh; Sonsky, Jan; Kuball, Martin

Subthreshold Mobility in AlGaN/GaN HEMTs

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IEEE, 2016

Published in: IEEE Transactions on Electron Devices
Shuxun Lin; Maojun Wang; Bing Xie; Wen, Cheng P.; Min Yu; Jinyan Wang; Yilong Hao; Wengang Wu; Sen Huang; Chen, Kevin J.; Bo Shen

Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

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IEEE, 2015

Published in: IEEE Electron Device Letters
Wang, Maojun; Yan, Dawei; Zhang, Chuan; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Shen, Bo

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed $I-V$ Measurement

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IEEE, 2014

Published in: IEEE Electron Device Letters
Simin, Grigory S.; Islam, Mirwazul; Gaevski, Mikhail; Deng, Jianyu; Gaska, Remis; Shur, Michael S.

Low RC-Constant Perforated-Channel HFET

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IEEE, 2014

Published in: IEEE Electron Device Letters

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