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O'Donnell, Kevin Peter [Editor]; O'Donnell, Kevin [Editor]

Rare-earth doped III-nitrides for optoelectronic and spintronic applications

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Dordrecht; Heidelberg [u.a.]: Springer, 2010

Published in: Topics in applied physics ; 12400
Hoffmann, Marc Patrick [Author] ; Kneissl, Michael [Degree supervisor]; Lehmann, Michael [Degree supervisor]; Sitar, Zlatko [Degree supervisor]

Polarity control and doping in aluminum gallium nitride / Polarity control and doping in aluminum gallium nitride

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https://d-nb.info/1065664699/34

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Berlin: Technische Universität Berlin, 2013
Verzellesi, Giovanni [Editor]; Verzellesi, Giovanni [Other]

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

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DOAB: download the publication

DOAB: description of the publication

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Basel: MDPI - Multidisciplinary Digital Publishing Institute, 2022
Zhang, Yun-Yan; Yin, Yi-An

Correction to "Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer" [Jul 12 994-996]

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IEEE, 2012

Published in: IEEE Electron Device Letters
Liu, Cheng; Yang, Shu; Liu, Shenghou; Tang, Zhikai; Wang, Hanxing; Jiang, Qimeng; Chen, Kevin J.

Correction to “Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier” [Apr 15 318-320]

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IEEE, 2015

Published in: IEEE Electron Device Letters
Hilt, Oliver; Kotara, Przemyslaw; Brunner, Frank; Knauer, Arne; Zhytnytska, Rimma; Wurfl, Joachim

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

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IEEE, 2013

Published in: IEEE Transactions on Electron Devices
Mengyuan Hua; Yunyou Lu; Shenghou Liu; Cheng Liu; Kai Fu; Yong Cai; Baoshun Zhang; Chen, Kevin J.

Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT

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IEEE, 2016

Published in: IEEE Electron Device Letters
Nuttinck, S.; Wagner, B.K.; Banerjee, B.; Venkataraman, S.; Gebara, E.; Laskar, J.; Harris, H.M.

Thermal analysis of AlGaN-GaN power HFETs

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IEEE, 2003

Published in: IEEE Transactions on Microwave Theory and Techniques
Davis, R.F.

III-V nitrides for electronic and optoelectronic applications

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IEEE, 1991

Published in: Proceedings of the IEEE
Xu, J.J.; Keller, S.; Parish, G.; Heikman, S.; Mishra, U.K.; York, R.A.

A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier

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IEEE, 2000

Published in: IEEE Transactions on Microwave Theory and Techniques
Pei Zhao; Verma, Amit; Verma, Jai; Xing, Huili Grace; Fay, Patrick; Jena, Debdeep

GaN Heterostructure Barrier Diodes Exploiting Polarization-Induced $\delta$ -Doping

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IEEE, 2014

Published in: IEEE Electron Device Letters
Mastro, M. A.; Hong-Youl Kim; Jaehui Ahn; Simpkins, B.; Pehrsson, P.; Jihyun Kim; Hite, J. K.; Eddy, C. R.

Polarization and Space-Charge-Limited Current in III-Nitride Heterostructure Nanowires

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IEEE, 2011

Published in: IEEE Transactions on Electron Devices
Meneghini, M.; de Santi, C.; Ueda, T.; Tanaka, T.; Ueda, D.; Zanoni, E.; Meneghesso, G.

Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

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IEEE, 2012

Published in: IEEE Electron Device Letters
Hjelmgren, H.; Thorsell, M.; Andersson, K.; Rorsman, N.

Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures

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IEEE, 2012

Published in: IEEE Transactions on Electron Devices
Umeda, H.; Takizawa, T.; Anda, Y.; Ueda, T.; Tanaka, T.

High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors

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IEEE, 2013

Published in: IEEE Transactions on Electron Devices
Sukwon Choi; Heller, E. R.; Dorsey, D.; Vetury, R.; Graham, S.

Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features

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IEEE, 2013

Published in: IEEE Transactions on Electron Devices
Chowdhury, Srabanti; Mishra, Umesh K.

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

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IEEE, 2013

Published in: IEEE Transactions on Electron Devices
Gatabi, I. R.; Johnson, D. W.; Jung Hwan Woo; Anderson, J. W.; Coan, M. R.; Piner, E. L.; Harris, H. R.

PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures

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IEEE, 2013

Published in: IEEE Transactions on Electron Devices
Minko, A.; Hoel, V.; Morvan, E.; Grimbert, B.; Soltani, A.; Delos, E.; Ducatteau, D.; Gaquiere, C.; Theron, D.; De Jaeger, J.C.; Lahreche, H.; Wedzikowski, L.; Langer, R.; Bove, P.

AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

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IEEE, 2004

Published in: IEEE Electron Device Letters
Wu, Y.-F.; Keller, B.P.; Fini, P.; Keller, S.; Jenkins, T.J.; Kehias, L.T.; Denbaars, S.P.; Mishra, U.K.

High Al-content AlGaN/GaN MODFETs for ultrahigh performance

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IEEE, 1998

Published in: IEEE Electron Device Letters

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