Skip to contents Yen-Wei Chen; Wei-Chou Hsu; Her-Ming Shieh; Yeong-Jia Chen; Yu-Shyan Lin; Yih-Juan Li; Tzong-Bin Wang High breakdown characteristic /spl delta/-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2002 Published in: IEEE Transactions on Electron Devices Suemitsu, T.; Yokoyama, H.; Umeda, Y.; Enoki, T.; Ishii, Y. High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 1999 Published in: IEEE Transactions on Electron Devices Higuchi, K.; Matsumoto, H.; Mishima, T.; Nakamura, T. Optimum design and fabrication of InAlAs/InGaAs HEMT's on GaAs with both high breakdown voltage and high maximum frequency of oscillation Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 1999 Published in: IEEE Transactions on Electron Devices Sleiman, A.; Di Carlo, A.; Lugli, P.; Zandler, G. Breakdown quenching in high electron mobility transistor by using body contact Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices Leoni, R.E.; Hwang, J.C.M. Mechanisms for output power expansion and degradation of PHEMT's during high-efficiency operation Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 1999 Published in: IEEE Transactions on Electron Devices Quay, R.; Hess, K.; Reuter, R.; Schlechtweg, M.; Grave, T.; Palankovski, V.; Selberherr, S. Nonlinear electronic transport and device performance of HEMTs Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices Bradley, S.T.; Young, A.P.; Brillson, L.J.; Murphy, M.J.; Schaff, W.J.; Eastman, L.E. Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices Wen-Chau Liu; Wen-Lung Chang; Wen-Shiung Lour; Kuo-Hui Yu; Kun-Wei Lin; Chin-Chuan Cheng; Shiou-Ying Cheng Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/In/sub x/Ga/sub 1-x/As/GaAs pseudomorphic high electron mobility transistor Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices Takanashi, Y.; Takahata, K.; Muramoto, Y. Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 1999 Published in: IEEE Transactions on Electron Devices Sen, S.; Pandey, M.K.; Gupta, R.S. Two-dimensional C-V model of AlGaAs/GaAs modulation doped field effect transistor (MODFET) for high frequency applications Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 1999 Published in: IEEE Transactions on Electron Devices Karmalkar, S.; Krishna Rao, R.R. A simple yet comprehensive unified physical model of the donor layer electrons in delta-doped and uniformly doped HEMT's Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2000 Published in: IEEE Transactions on Electron Devices Dong Xu; Suemitsu, T.; Osaka, J.; Umeda, Y.; Yamane, Y.; Ishii, Y.; Ishii, T.; Tamamura, T. Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: an electrochemical fabrication technology Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2000 Published in: IEEE Transactions on Electron Devices Karmalkar, S.; Ramesh, G. A simple yet comprehensive unified physical model of the 2D electron gas in delta-doped and uniformly doped high electron mobility transistors Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2000 Published in: IEEE Transactions on Electron Devices Yi-Feng Wu; Kapolnek, D.; Ibbetson, J.P.; Parikh, P.; Keller, B.P.; Mishra, U.K. Very-high power density AlGaN/GaN HEMTs Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices Somerville, M.H.; Blanchard, R.; del Alamo, J.A.; Duh, K.G.; Chao, P.C. On-state breakdown in power HEMTs: measurements and modeling Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 1999 Published in: IEEE Transactions on Electron Devices Sacconi, F.; Di Carlo, A.; Lugli, P.; Morkoc, H. Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices Shih-Cheng Yang; Hsien-Chin Chiu; Yi-Jen Chan; Hao-Hsiung Lin; Jenn-Ming Kuo (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices Binari, S.C.; Ikossi, K.; Roussos, J.A.; Kruppa, W.; Doewon Park; Dietrich, H.B.; Koleske, D.D.; Wickenden, A.E.; Henry, R.L. Trapping effects and microwave power performance in AlGaN/GaN HEMTs Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices Leoni, R.E.; Bao, J.; Bu, J.; Du, X.; Shirokov, M.S.; Hwang, J.C.M. Mechanism for recoverable power drift in PHEMTs Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2000 Published in: IEEE Transactions on Electron Devices Sang Yun Lee; Cetiner, B.A.; Torpi, H.; Cai, S.J.; Jiang Li; Alt, K.; Chen, Y.L.; Wen, C.P.; Wang, K.L.; Itoh, T. An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices
Yen-Wei Chen; Wei-Chou Hsu; Her-Ming Shieh; Yeong-Jia Chen; Yu-Shyan Lin; Yih-Juan Li; Tzong-Bin Wang High breakdown characteristic /spl delta/-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2002 Published in: IEEE Transactions on Electron Devices
Suemitsu, T.; Yokoyama, H.; Umeda, Y.; Enoki, T.; Ishii, Y. High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 1999 Published in: IEEE Transactions on Electron Devices
Higuchi, K.; Matsumoto, H.; Mishima, T.; Nakamura, T. Optimum design and fabrication of InAlAs/InGaAs HEMT's on GaAs with both high breakdown voltage and high maximum frequency of oscillation Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 1999 Published in: IEEE Transactions on Electron Devices
Sleiman, A.; Di Carlo, A.; Lugli, P.; Zandler, G. Breakdown quenching in high electron mobility transistor by using body contact Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices
Leoni, R.E.; Hwang, J.C.M. Mechanisms for output power expansion and degradation of PHEMT's during high-efficiency operation Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 1999 Published in: IEEE Transactions on Electron Devices
Quay, R.; Hess, K.; Reuter, R.; Schlechtweg, M.; Grave, T.; Palankovski, V.; Selberherr, S. Nonlinear electronic transport and device performance of HEMTs Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices
Bradley, S.T.; Young, A.P.; Brillson, L.J.; Murphy, M.J.; Schaff, W.J.; Eastman, L.E. Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices
Wen-Chau Liu; Wen-Lung Chang; Wen-Shiung Lour; Kuo-Hui Yu; Kun-Wei Lin; Chin-Chuan Cheng; Shiou-Ying Cheng Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/In/sub x/Ga/sub 1-x/As/GaAs pseudomorphic high electron mobility transistor Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices
Takanashi, Y.; Takahata, K.; Muramoto, Y. Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 1999 Published in: IEEE Transactions on Electron Devices
Sen, S.; Pandey, M.K.; Gupta, R.S. Two-dimensional C-V model of AlGaAs/GaAs modulation doped field effect transistor (MODFET) for high frequency applications Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 1999 Published in: IEEE Transactions on Electron Devices
Karmalkar, S.; Krishna Rao, R.R. A simple yet comprehensive unified physical model of the donor layer electrons in delta-doped and uniformly doped HEMT's Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2000 Published in: IEEE Transactions on Electron Devices
Dong Xu; Suemitsu, T.; Osaka, J.; Umeda, Y.; Yamane, Y.; Ishii, Y.; Ishii, T.; Tamamura, T. Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: an electrochemical fabrication technology Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2000 Published in: IEEE Transactions on Electron Devices
Karmalkar, S.; Ramesh, G. A simple yet comprehensive unified physical model of the 2D electron gas in delta-doped and uniformly doped high electron mobility transistors Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2000 Published in: IEEE Transactions on Electron Devices
Yi-Feng Wu; Kapolnek, D.; Ibbetson, J.P.; Parikh, P.; Keller, B.P.; Mishra, U.K. Very-high power density AlGaN/GaN HEMTs Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices
Somerville, M.H.; Blanchard, R.; del Alamo, J.A.; Duh, K.G.; Chao, P.C. On-state breakdown in power HEMTs: measurements and modeling Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 1999 Published in: IEEE Transactions on Electron Devices
Sacconi, F.; Di Carlo, A.; Lugli, P.; Morkoc, H. Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices
Shih-Cheng Yang; Hsien-Chin Chiu; Yi-Jen Chan; Hao-Hsiung Lin; Jenn-Ming Kuo (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices
Binari, S.C.; Ikossi, K.; Roussos, J.A.; Kruppa, W.; Doewon Park; Dietrich, H.B.; Koleske, D.D.; Wickenden, A.E.; Henry, R.L. Trapping effects and microwave power performance in AlGaN/GaN HEMTs Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices
Leoni, R.E.; Bao, J.; Bu, J.; Du, X.; Shirokov, M.S.; Hwang, J.C.M. Mechanism for recoverable power drift in PHEMTs Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2000 Published in: IEEE Transactions on Electron Devices
Sang Yun Lee; Cetiner, B.A.; Torpi, H.; Cai, S.J.; Jiang Li; Alt, K.; Chen, Y.L.; Wen, C.P.; Wang, K.L.; Itoh, T. An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique Articles View online Schließen > Access Close > Bookmarks You can manage bookmarks using lists, please log in to your user account for this. IEEE, 2001 Published in: IEEE Transactions on Electron Devices
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> Creator Skip to next facet Mishra, U.K. (71) Wert ausschließen Keller, S. (38) Wert ausschließen Adesida, I. (36) Wert ausschließen del Alamo, J.A. (35) Wert ausschließen Shur, M.S. (30) Wert ausschließen Morkoc, H. (27) Wert ausschließen Eastman, L.F. (26) Wert ausschließen Simin, G. (24) Wert ausschließen Hao, Yue (23) Wert ausschließen Khan, M.A. (23) Wert ausschließen Palacios, T. (23) Wert ausschließen Mimura, T. (22) Wert ausschließen Shur, M. (21) Wert ausschließen Zanoni, E. (21) Wert ausschließen Chen, K.J. (20) Wert ausschließen DenBaars, S.P. (20) Wert ausschließen Chao, P.C. (18) Wert ausschließen Meneghini, Matteo (18) Wert ausschließen Chen, Kevin J. (17) Wert ausschließen Fay, P. (17) Wert ausschließen Meneghesso, Gaudenzio (17) Wert ausschließen Zanoni, Enrico (17) Wert ausschließen Enoki, T. (16) Wert ausschließen Gaquiere, C. (16) Wert ausschließen Heikman, S. (16) Wert ausschließen Lai, R. (16) Wert ausschließen Lau, K.M. (16) Wert ausschließen Meneghesso, G. (16) Wert ausschließen Smith, P.M. (16) Wert ausschließen Das, M.B. (15) Wert ausschließen Yang, J. (15) Wert ausschließen Canali, C. (14) Wert ausschließen Chakraborty, A. (14) Wert ausschließen Koudymov, A. (14) Wert ausschließen Kuball, Martin (14) Wert ausschließen Ma, Xiaohua (14) Wert ausschließen Pavlidis, D. (14) Wert ausschließen Rorsman, Niklas (14) Wert ausschließen Yang, Ling (14) Wert ausschließen Abe, M. (13) Wert ausschließen Sen Huang (13) Wert ausschließen Shiping Guo (13) Wert ausschließen Xiang Gao (13) Wert ausschließen Zhang, Meng (13) Wert ausschließen Zhu, Qing (13) Wert ausschließen Adivarahan, V. (12) Wert ausschließen Bolognesi, C.R. (12) Wert ausschließen Brown, A.S. (12) Wert ausschließen Chang, E.Y. (12) Wert ausschließen Chang-Luen Wu (12) Wert ausschließen Chini, A. (12) Wert ausschließen Gaska, R. (12) Wert ausschließen Hou, Bin (12) Wert ausschließen Kohn, E. (12) Wert ausschließen Theron, D. (12) Wert ausschließen Uren, Michael J. (12) Wert ausschließen Wei-Chou Hsu (12) Wert ausschließen Decoutere, Stefaan (11) Wert ausschließen Matsui, T. (11) Wert ausschließen Schlechtweg, M. (11) Wert ausschließen Shen, L. (11) Wert ausschließen Streit, D.C. (11) Wert ausschließen Thorsell, Mattias (11) Wert ausschließen Uren, M.J. (11) Wert ausschließen Yi Pei (11) Wert ausschließen Bahl, S.R. (10) Wert ausschließen Ballingall, J.M. (10) Wert ausschließen Bollaert, S. (10) Wert ausschließen Cappy, A. (10) Wert ausschließen Ketterson, A. (10) Wert ausschließen Kopp, W. (10) Wert ausschließen Larson, L.E. (10) Wert ausschließen Laskar, J. (10) Wert ausschließen Maezawa, K. (10) Wert ausschließen Mizutani, T. (10) Wert ausschließen Nguyen, L.D. (10) Wert ausschließen Ronghua Wang (10) Wert ausschließen Rongming Chu (10) Wert ausschließen Shinohara, K. (10) Wert ausschließen Tasker, P.J. (10) Wert ausschließen Yi-Jen Chan (10) Wert ausschließen Yong Cai (10) Wert ausschließen Zhu, Jiejie (10) Wert ausschließen Bhat, R. (9) Wert ausschließen Chu, J.O. (9) Wert ausschließen Crespo, A. (9) Wert ausschließen Denbaars, S.P. (9) Wert ausschließen Grandjean, N. (9) Wert ausschließen Hikosaka, K. (9) Wert ausschließen Ho, P. (9) Wert ausschließen Huili Xing (9) Wert ausschließen Ishii, Y. (9) Wert ausschließen Kumar, V. (9) Wert ausschließen Matloubian, M. (9) Wert ausschließen McMorrow, D. (9) Wert ausschließen Mi, Minhan (9) Wert ausschließen Ren, F. (9) Wert ausschließen Yu Cao (9) Wert ausschließen Arafa, M. (8) Wert ausschließen Bakeroot, Benoit (8) Wert ausschließen Show more show less