• Medientyp: E-Artikel
  • Titel: Low-voltage-operated top-gate polymer thin-film transistors with high capacitance poly(vinylidene fluoride-trifluoroethylene)/poly(methyl methacrylate) dielectrics
  • Beteiligte: Jung, Soon-Won; Baeg, Kang-Jun; Yoon, Sung-Min; You, In-Kyu; Lee, Jong-Keun; Kim, Young-Soon; Noh, Yong-Young
  • Erschienen: AIP Publishing, 2010
  • Erschienen in: Journal of Applied Physics
  • Umfang:
  • Sprache: Englisch
  • DOI: 10.1063/1.3511697
  • ISSN: 0021-8979; 1089-7550
  • Schlagwörter: General Physics and Astronomy
  • Zusammenfassung: <jats:p>We report on low-voltage-operated polymer transistors with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/poly(methyl methacrylate) (PMMA) blended films as a gate dielectric layer. Top-gate polymer transistors are fabricated by all-solution processes on poly(9,9-dioctylfuorene-co-bithiophene) (F8T2) as an active layer. Both the operating voltage and charge carrier mobility are improved using P(VDF-TrFE)/PMMA blended films as a dielectric layer and by optimization of the ratio of the composite. F8T2 transistors have a high field-effect mobility of 1×10−2 cm2/V s and a low operation gate voltage of less than 10 V. The operation voltage effectively decreases owing to the high permittivity of the P(VDF-TrFE)]/(PMMA) blended film (10.4–8.4). The hysteresis induced by the ferroelectric polymer effectively disappears with the addition of a small amount of amorphous PMMA (5 wt %).</jats:p>
  • Beschreibung: <jats:p>We report on low-voltage-operated polymer transistors with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/poly(methyl methacrylate) (PMMA) blended films as a gate dielectric layer. Top-gate polymer transistors are fabricated by all-solution processes on poly(9,9-dioctylfuorene-co-bithiophene) (F8T2) as an active layer. Both the operating voltage and charge carrier mobility are improved using P(VDF-TrFE)/PMMA blended films as a dielectric layer and by optimization of the ratio of the composite. F8T2 transistors have a high field-effect mobility of 1×10−2 cm2/V s and a low operation gate voltage of less than 10 V. The operation voltage effectively decreases owing to the high permittivity of the P(VDF-TrFE)]/(PMMA) blended film (10.4–8.4). The hysteresis induced by the ferroelectric polymer effectively disappears with the addition of a small amount of amorphous PMMA (5 wt %).</jats:p>
  • Anmerkungen: