Ishii, Masashi;
Dhesi, Sarnjeet S.;
Hamilton, Bruce
Confinement, overflow, and emission of holes on SiGe surface with Ge dots: Heterogeneous hole redistribution and its application to virtual dot manipulation
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Medientyp:
E-Artikel
Titel:
Confinement, overflow, and emission of holes on SiGe surface with Ge dots: Heterogeneous hole redistribution and its application to virtual dot manipulation
Beteiligte:
Ishii, Masashi;
Dhesi, Sarnjeet S.;
Hamilton, Bruce
Beschreibung:
<jats:p>The hole confinement in Ge dots fabricated on a wetting layer in Stranski–Krastanov (S-K) growth was directed by an applied bias. At medium bias voltage, the holes overflowed from the small dots, indicating a moderate potential barrier without a notch at the boundary. The electrostatic force of the confined holes attracted excessive holes to the wetting layer. The system was energetically stabilized by the formation of a “virtual dot” in an open space enclosed by dots. At a high bias voltage, the virtual dot disappeared since the holes in the wetting layer were emitted from the surface.</jats:p>