• Medientyp: E-Artikel
  • Titel: Improving the intrinsic cut-off frequency of gate-all-around quantum-wire transistors without channel length scaling
  • Beteiligte: Benali, A.; Traversa, F. L.; Albareda, G.; Aghoutane, M.; Oriols, X.
  • Erschienen: AIP Publishing, 2013
  • Erschienen in: Applied Physics Letters
  • Umfang:
  • Sprache: Englisch
  • DOI: 10.1063/1.4803164
  • ISSN: 0003-6951; 1077-3118
  • Schlagwörter: Physics and Astronomy (miscellaneous)
  • Zusammenfassung: <jats:p>Progress in high-frequency transistors is based on reducing electron transit time, either by scaling their lengths or by introducing materials with higher electron mobility. For gate-all-around quantum-wire transistors with lateral dimensions similar or smaller than their length, a careful analysis of the displacement current reveals that a time shorter than the transit time controls their high-frequency performance. Monte Carlo simulations of such transistors with a self-consistent solution of the 3D Poisson equation clearly show an improvement of the intrinsic cut-off frequency when their lateral areas are reduced, without length scaling.</jats:p>
  • Beschreibung: <jats:p>Progress in high-frequency transistors is based on reducing electron transit time, either by scaling their lengths or by introducing materials with higher electron mobility. For gate-all-around quantum-wire transistors with lateral dimensions similar or smaller than their length, a careful analysis of the displacement current reveals that a time shorter than the transit time controls their high-frequency performance. Monte Carlo simulations of such transistors with a self-consistent solution of the 3D Poisson equation clearly show an improvement of the intrinsic cut-off frequency when their lateral areas are reduced, without length scaling.</jats:p>
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