• Medientyp: E-Artikel
  • Titel: Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate
  • Beteiligte: Li, Lin; Liao, Zhaoliang; Gauquelin, Nicolas; Nguyen, Minh Duc; Hueting, Raymond J. E.; Gravesteijn, Dirk J.; Lobato, Ivan; Houwman, Evert P.; Lazar, Sorin; Verbeeck, Johan; Koster, Gertjan; Rijnders, Guus
  • Erschienen: Wiley, 2018
  • Erschienen in: Advanced Materials Interfaces
  • Sprache: Englisch
  • DOI: 10.1002/admi.201700921
  • ISSN: 2196-7350
  • Schlagwörter: Mechanical Engineering ; Mechanics of Materials
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: <jats:title>Abstract</jats:title><jats:p>Due to its physical properties gallium‐nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high‐power and high‐frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead–zirconate–titanate (PbZr<jats:italic><jats:sub>x</jats:sub></jats:italic>Ti<jats:sub>1‐</jats:sub><jats:italic><jats:sub>x</jats:sub></jats:italic>O<jats:sub>3</jats:sub>) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr<jats:sub>1‐</jats:sub><jats:italic><jats:sub>x</jats:sub></jats:italic>Ti<jats:italic><jats:sub>x</jats:sub></jats:italic>)O<jats:sub>3</jats:sub> on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr<jats:sub>0.52</jats:sub>Ti<jats:sub>0.48</jats:sub>)O<jats:sub>3</jats:sub> (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.</jats:p>