Beschreibung:
AbstractIsothermal photoconductive decay in p‐ZnTe was used to determine the energy levels associated with the native defect acceptors as 0.024, 0.017, and 0.011 eV. The capture cross‐section and carrier lifetime were computed at different temperatures (77–200 K) by conjuncting these results with some theoretical equations. The results were explained on the basis of Zn vacancies and vacancy complexes.