Beschreibung:
<jats:title>Abstract</jats:title><jats:p>Thin layers of SrHfO<jats:sub>3</jats:sub>, BaHfO<jats:sub>3</jats:sub> and BaZrO<jats:sub>3</jats:sub> are deposited onto TiN substrates and investigated in view of memory capacitor applications. The as deposited layers are amorphous and show dielectric constants of about 20. Rapid thermal annealing induces crystallization in the cubic perovskite phase and results in an increase of the dielectric constant up to 45. A combination of X‐ray absorption spectroscopy (XAS) and photoemission spectroscopy measurements reports high electronic band gap values comparable with that of reference HfO<jats:sub>2</jats:sub> layers.</jats:p>