Beschreibung:
<jats:title>Abstract</jats:title><jats:p>The luminescent emission of undoped and P‐doped ZnTe single crystals is measured at 1.8 and 77 K under one‐photon excitation by a Cd‐He laser and a ruby laser. At 1.8 K, at low excitation intensities, radiative recombination through bound excitons and impurities predominates. At increasing intensity, inelastic exciton‐exciton collisions become the most important recombination process. At the highest excitation, ionisation of excitons occurs accompanied by band‐to‐band recombination. At 77 K, all bound excitons except those bound to donor–acceptor centres are destroyed. At low excitation intensities, radiation from the decay of free excitons, band‐to‐band transitions, and impurity centres are observed. At high intensities, radiation from inelastic exciton‐electron collisions is predominant.</jats:p>