• Medientyp: E-Artikel
  • Titel: Organic Nano-Floating-Gate Memory with Polymer:[6,6]-Phenyl-C61 Butyric Acid Methyl Ester Composite Films
  • Beteiligte: Baeg, Kang-Jun; Khim, Dongyoon; Kim, Dong-Yu; Jung, Soon-Won; Koo, Jae Bon; Noh, Yong-Young
  • Erschienen: IOP Publishing, 2010
  • Erschienen in: Japanese Journal of Applied Physics
  • Sprache: Nicht zu entscheiden
  • DOI: 10.1143/jjap.49.05eb01
  • ISSN: 1347-4065; 0021-4922
  • Schlagwörter: General Physics and Astronomy ; General Engineering
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: <jats:p> Here, we report on a pentacene-based, nonvolatile transistor memory device with poly(4-vinyl phenol) (PVP):[6,6]-phenyl-C<jats:sub>61</jats:sub> butyric acid methyl ester (PCBM) nano-composite films as the charge storage site. Incorporation of PCBM molecules into PVP dielectric materials as charge storage sites for electrons resulted in a reversible shift in the threshold voltage (<jats:italic>V</jats:italic> <jats:sub>Th</jats:sub>) and reliable memory characteristics. The characteristics of the pentacene memory device were as follows: a relatively high field-effect mobility (µ<jats:sub>FET</jats:sub>) (0.2–0.3 cm<jats:sup>2</jats:sup> V<jats:sup>-1</jats:sup> s<jats:sup>-1</jats:sup>) with a large memory window (<jats:italic>ca.</jats:italic> 20 V), a high on/off ratio (∼10<jats:sup>4</jats:sup>) during writing and erasing with application of an operating gate voltage of 60 V for a short duration time (∼1 ms), and a retention time of about 40 h. </jats:p>