Beschreibung:
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Here, we report on a pentacene-based, nonvolatile transistor memory device with poly(4-vinyl phenol) (PVP):[6,6]-phenyl-C<jats:sub>61</jats:sub> butyric acid methyl ester (PCBM) nano-composite films as the charge storage site. Incorporation of PCBM molecules into PVP dielectric materials as charge storage sites for electrons resulted in a reversible shift in the threshold voltage (<jats:italic>V</jats:italic>
<jats:sub>Th</jats:sub>) and reliable memory characteristics. The characteristics of the pentacene memory device were as follows: a relatively high field-effect mobility (µ<jats:sub>FET</jats:sub>) (0.2–0.3 cm<jats:sup>2</jats:sup> V<jats:sup>-1</jats:sup> s<jats:sup>-1</jats:sup>) with a large memory window (<jats:italic>ca.</jats:italic> 20 V), a high on/off ratio (∼10<jats:sup>4</jats:sup>) during writing and erasing with application of an operating gate voltage of 60 V for a short duration time (∼1 ms), and a retention time of about 40 h.
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