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Weiß, Matthias [Author]

Leistungscharakteristik und Sättigungsmechanismen von TEGFETs und MESFETs

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Düsseldorf: VDI-Verl., 1988

Published in: Verein Deutscher Ingenieure: Fortschrittberichte VDI / 9 ; 78
Honkanen, Katri Eliisa [Author]

A GaAs-based photoreceiver consisting of a submicron metal-semiconductor-metal photodetector and high electron mobiblity transistor

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2002
Meschede, Herbert [Author]

Hochfrequenzcharakterisierung von Mikrowellentransistoren aus III-V-Halbleitermaterial bei Temperaturen im Bereich von 20 K bis 300 K - [Als Ms. gedr.]

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Düsseldorf: VDI-Verl., 1993

Published in: Verein Deutscher Ingenieure: Fortschritt-Berichte VDI / 21 ; 144
Pearton, Stephen J. [Author]; Abernathy, Cammy R. [Author]; Ren, Fan [Author]

Gallium nitride processing for electronics, sensors and spintronics

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London [u.a.]: Springer, 2006

Published in: Engineering materials and processes
Kudszus, Steffen [Author]

Monolithisch integrierte Millimeterwellen-Oszillatoren auf der Basis von Heterostruktur-Feldeffekttransistoren - [Als Ms. gedr]

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Düsseldorf: VDI-Verl., 2001

Published in: Verein Deutscher Ingenieure: Fortschrittberichte VDI / 9 ; 336
Kleindienst, Thorsten [Author]

2D-Computersimulation von A1GaAs/InGaAs Hetrostruktur-Feldeffekttransistoren

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2000 ; Mikrofiche-Ausg.
Berntgen, Jürgen [Author]

Niederfrequentes Rauschen von In 0,53 Ga 0,47 As-Bulkmaterial und In x Ga 1-x As-Quantentopf-Strukturen : ein Beitrag zum Verständnis niederfrequenter Schwankungserscheinungen in modernen Heterostruktur-Feldeffekttransistoren - [Als Ms. gedr.]

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Aachen: Shaker, 2000

Published in: Berichte aus der Elektrotechnik
Werkstetter, Mario [Author]

Hocheffizienter DC/DC-Wandler auf Basis von GaN-Leistungsschaltern für Hochleistungs-Leuchtdioden im Kraftfahrzeug

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Chemnitz: Universitätsverlag Chemnitz, 2018
Quay, Rüdiger [Author]

Gallium nitride electronics

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Berlin; Heidelberg: Springer, 2008

Published in: Springer series in materials science ; 96
Anholt, Robert Edward [Author]

Electrical and thermal characterization of MESFETs, HEMTs, and HBTs

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Boston [u.a.]: Artech House, 1995

Published in: Artech House microwave library
Ross, R. Lee [Editor] ; Advanced Study Institute on Pseudomorphic HEMT Technology and Applications 1994 Erice

Pseudomorphic HEMT technology and applications ; [proceedings of the NATO Advanced Study Institute on Pseudomorphic HEMT Technology and Applications Erice, Sicily, Italy, July 14-25, 1994]

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Dordrecht; London [u.a.]: Kluwer Academic, 1996

Published in: NATO: NATO ASI series / E ; 309
Liu, William [Author]

Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs

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New York; Weinheim [u.a.]: Wiley, c 1999

Published in: A Wiley-Interscience publication
Pribahsnik, Florian Peter [Author] ; Lindemann, Andreas [Degree supervisor]

Gallium Nitride (GaN) specific mechanical phenomena and their influence on reliability in power HEMT operation - [1. Auflage]

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Magdeburg: Otto-von-Guericke-Universität, 2022

Published in: Res electricae Magdeburgenses ; 89
Ponse, Frederik [Author]; Berger, Otto [Author] ; Siemens Aktiengesellschaft Bereich Halbleiter, European Space Agency

Final report on HEMT evaluation for space applications types CFY66 and CFY67 : evaluation and qualification on high electron mobility transistor (HEMT), phase I & II, according ESA/SCC basic Specification No. 2265010 and ESA/SCC Generic Specification No. 5010; ESA/SCC Detail Specification No. 5613/002, ESA/SCC Detail Specification No. 5613/004; ESTEC contract no. 9901/92/NL/NB(SC), DARA contract no. 50 IB 9304

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Munich: Siemens AG, Semiconductor Group, 1993

Published in: European Space Agency contract report
Malik, Adil Mahmood [Author]

Technology and physics of gate recessed GaN AlGaN FETs

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2003
Rämer, Adam [Author] ; Heinrich, Wolfgang [Degree supervisor]; Krozer, Viktor [Degree supervisor]; Heinrich, Wolfgang [Other]; Krozer, Viktor [Other]; Bolívar, P. Haring [Other]

Design und Realisierung GaN-HEMT basierter THz-Detektoren

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https://d-nb.info/1283408449/34

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Berlin: Technische Universität Berlin, 2023
Mehlhose, Sven [Author] ; Tanaka, Motomu [Degree supervisor]

Biofunctionalization of GaN/AlGaN/GaN High Electron Mobility Transistors

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Heidelberg: Universitätsbibliothek Heidelberg, 2019
Eickelkamp, Martin [Author]

Processing approaches and gate dielectrics for AlGaN/GaN-based MISHFET

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Aachen: Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2014
Strang, Benjamin Simon [Author]

Fabrication and characterization of gallium nitride based high electron mobility transistors for mm-wave applications = Herstellung und Charakterisierung von Gallium-Nitrid-basierten High-Electron-Mobility-Transistoren für mm-Wellen-Anwendungen

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Aachen: Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2012
Khalil, Ibrahim [Author]

Intermodulation distortion in GaN HEMT

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http://opus.kobv.de/tuberlin/volltexte/2009/2470/

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