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Agrawal, Bal. K [Contributor]; Aleksandkov, A .Yu [Contributor]; Alshits, V.I [Contributor]; Altukhov, V. I [Contributor]; Asmontas, S. P [Contributor]; Backus, J . G. E . M [Contributor]; Bakker, H [Contributor]; Baldini, G [Contributor]; Bansal, C [Contributor]; Beau, A [Contributor]; Birch, J . R [Contributor]; Birss, R. R [Contributor]; Boccaba, A . C [Contributor]; Bostciani, M [Contributor]; Bradley, C. C [Contributor]; Brandt, E . H [Contributor]; Brenig, W [Contributor]; Chamberod, A [Contributor]; Chandra, G [Contributor]; Chartoryzhskii, D. N [Contributor]; Claus, R [Contributor]; Coey, J.M.D [Contributor]; Cohen, M. E [Contributor]; Cottini, M [Contributor]; [...]

Physica status solidi : Volume 64, Number 1: July 1 - [Reprint 2021]

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Berlin; Boston: De Gruyter, [2022] ; [Online-Ausgabe]

Published in: Physica status solidi ; Volume 64, Number 1 ; B
Adam, M. [Contributor]; Ageev, V.P [Contributor]; Albrecht, O. [Contributor]; Aleksandrov, L .N [Contributor]; Aleksandrov, L.N [Contributor]; Aleksaridrov, L .N [Contributor]; Andoh, Yasunori [Contributor]; Andra, W [Contributor]; Andrä, G [Contributor]; Andrä, G. [Contributor]; Andrä, H. [Contributor]; Andrä, W [Contributor]; Andrä, W. [Contributor]; Armigliato, A. [Contributor]; Bachmann, T. [Contributor]; Baither, D. [Contributor]; Balandin, V .Yu [Contributor]; Balandin, V.Yu [Contributor]; Bali, K. [Contributor]; Banisch, R [Contributor]; Banisch, R. [Contributor]; Barbier, D. [Contributor]; Barna, P. [Contributor]; Bartsch, H. [Contributor]; [...]

EPM 87. Energy Pulse and Particle Beam Modification of Materials : International Conference held September 7—11, 1987 Dresden, G.D.R - [Reprint 2022]

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Berlin; Boston: De Gruyter, [2022]

Published in: Physical Research ; 8
Karpuzov, D.S.

Computer simulated sputtering of polycrystalline targets by 40 keV argon ions

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Elsevier BV, 1987

Published in: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19-20 (1987), Seite 109-113
Karpuzov, D.S.

Introduction

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Elsevier BV, 1986

Published in: Vacuum, 36 (1986) 10, Seite 583
Karpuzov, D. S.

Profile Evolution in High-Dose Ion Implantation. A Computer Simulation Study

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Wiley, 1986

Published in: physica status solidi (a), 94 (1986) 1, Seite 365-370
Karpuzov, D.S.

Some model parameter effects in computer simulations of transmission sputtering

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Elsevier BV, 1985

Published in: Thin Solid Films, 124 (1985) 2, Seite L5-L8
Karpuzov, D. S.

Energy spectra of keV—ions backscattered from solid surfaces as influenced by inelastic losses

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Informa UK Limited, 1981

Published in: Radiation Effects, 54 (1981) 1-2, Seite 87-90
Karpuzov, D. S.

On the inelastic-loss approximation for keV-energy ion collisions in solids

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Springer Science and Business Media LLC, 1981

Published in: Applied Physics, 24 (1981) 2, Seite 121-126
Karpuzov, D. S.

Ejection Angles of Ions after Double Scattering on Solid‐Target Atoms

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Wiley, 1980

Published in: physica status solidi (b), 99 (1980) 2
Karpuzov, D.S.

Effect of the lattice-atom thermal vibrations on the reflection of ions from a single crystal

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Elsevier BV, 1974

Published in: Surface Science, 45 (1974) 2, Seite 342-352
Karpuzov, D. S.

Estimates of Angular and Energy Distributions of Ions Reflected from a Single Crystal

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Wiley, 1974

Published in: physica status solidi (b), 64 (1974) 1, Seite 351-355
Karpuzov, D S; Armour, D G

Spatial characteristics of low-keV ion bombardment induced damage in crystals

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IOP Publishing, 1984

Published in: Journal of Physics D: Applied Physics, 17 (1984) 4, Seite 853-862
He, A.; Karpuzov, D.; Xu, S.

Ink identification by time‐of‐flight secondary ion mass spectroscopy

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Wiley, 2006

Published in: Surface and Interface Analysis, 38 (2006) 4, Seite 854-858
Karpuzov, D.; He, A.; Xu, S.

Metal clustering during depth profiling of thin films

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Wiley, 2006

Published in: Surface and Interface Analysis, 38 (2006) 4, Seite 287-291
Stefanov, KG; Kaschieva, S; Karpuzov, D

Electrical characterization of defects induced by 12 MeV electrons in p—type Si-SiO2 structures

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Elsevier BV, 1998

Published in: Vacuum, 51 (1998) 2, Seite 235-237
Kaschieva, S.; Stefanov, K.G.; Karpuzov, D.

Electron irradiation of ion-implanted n-type Si-SiO 2 structures studied by deep-level transient spectroscopy

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Springer Science and Business Media LLC, 1998

Published in: Applied Physics A: Materials Science & Processing, 66 (1998) 5, Seite 561-563
Nedialkov, M; Zinenko, V; Karpuzov, D

A method for determining the fast neutral portion of ion beams

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Elsevier BV, 1995

Published in: Vacuum, 46 (1995) 12, Seite 1455-1457
Tzanev, S.; Neshev, I.; Karpuzov, D.

Azimuth-energy anisotropy of Ar ions scattered from a Ni(111) surface

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Elsevier BV, 1994

Published in: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 85 (1994) 1-4, Seite 443-447
Vichev, R. G.; Karpuzov, D. S.

On model parameters in applications of TRIM code to ion scattering from surfaces

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Informa UK Limited, 1994

Published in: Radiation Effects and Defects in Solids, null (1994) 1, Seite 313-320
Budinov, H.I.; Karpuzov, D.S.

High dose arsenic implantation of silicon

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Elsevier BV, 1993

Published in: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 73 (1993) 3, Seite 352-356

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