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Trommer, Jens; Heinzig, Andre; Baldauf, Tim; Slesazeck, Stefan; Mikolajick, Thomas; Weber, Walter M.

Functionality-Enhanced Logic Gate Design Enabled by Symmetrical Reconfigurable Silicon Nanowire Transistors

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Institute of Electrical and Electronics Engineers (IEEE), 2015

Published in: IEEE Transactions on Nanotechnology
Trommer, Jens; Heinzig, Andre; Slesazeck, Stefan; Mikolajick, Thomas; Weber, Walter Michael

Elementary Aspects for Circuit Implementation of Reconfigurable Nanowire Transistors

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Institute of Electrical and Electronics Engineers (IEEE), 2014

Published in: IEEE Electron Device Letters
Wylezich, Helge; Mähne, Hannes; Rensberg, Jura; Ronning, Carsten; Zahn, Peter; Slesazeck, Stefan; Mikolajick, Thomas

Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb2O5/NbOx Films

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American Chemical Society (ACS), 2014

Published in: ACS Applied Materials & Interfaces
Knebel, Steve; Kupke, Steve; Schroeder, Uwe; Slesazeck, Stefan; Mikolajick, Thomas; Agaiby, Rimoon; Trentzsch, Martin

Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability

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Institute of Electrical and Electronics Engineers (IEEE), 2013

Published in: IEEE Transactions on Electron Devices
Heinzig, André; Slesazeck, Stefan; Kreupl, Franz; Mikolajick, Thomas; Weber, Walter M.

Reconfigurable Silicon Nanowire Transistors

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American Chemical Society (ACS), 2012

Published in: Nano Letters
Weber, Walter M.; Heinzig, Andre; Martin, Dominik; Slesazeck, Stefan; Mikolajick, Thomas

Reconfigurable Nanowire Electronics

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The Electrochemical Society, 2011

Published in: ECS Meeting Abstracts
Mulaosmanovic, Halid; Dunkel, Stefan; Kleimaier, Dominik; Kacimi, Amine el; Beyer, Sven; Breyer, Evelyn T.; Mikolajick, Thomas; Slesazeck, Stefan

Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETs

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Institute of Electrical and Electronics Engineers (IEEE), 2021

Published in: IEEE Transactions on Electron Devices
Breyer, Evelyn T.; Mulaosmanovic, Halid; Trommer, Jens; Melde, Thomas; Dunkel, Stefan; Trentzsch, Martin; Beyer, Sven; Slesazeck, Stefan; Mikolajick, Thomas

Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory

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Institute of Electrical and Electronics Engineers (IEEE), 2020

Published in: IEEE Journal of the Electron Devices Society
Mulaosmanovic, Halid; Dunkel, Stefan; Muller, Johannes; Trentzsch, Martin; Beyer, Sven; Breyer, Evelyn T.; Mikolajick, Thomas; Slesazeck, Stefan

Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs

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Institute of Electrical and Electronics Engineers (IEEE), 2020

Published in: IEEE Electron Device Letters
Chohan, Talha; Zhao, Zhixing; Lehmann, Steffen; Arfaoui, Wafa; Bossu, Germain; Trommer, Jens; Slesazeck, Stefan; Mikolajick, Thomas; Siddabathula, Mahesh

Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI

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Institute of Electrical and Electronics Engineers (IEEE), 2022

Published in: IEEE Transactions on Device and Materials Reliability
Simon, Maik; Mulaosmanovic, Halid; Sessi, Violetta; Drescher, Maximilian; Bhattacharjee, Niladri; Slesazeck, Stefan; Wiatr, Maciej; Mikolajick, Thomas; Trommer, Jens

Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

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Springer Science and Business Media LLC, 2022

Published in: Nature Communications
Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

Ferroelectric negative capacitance domain dynamics

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AIP Publishing, 2018

Published in: Journal of Applied Physics
Hoffmann, Michael; Pešić, Milan; Chatterjee, Korok; Khan, Asif I.; Salahuddin, Sayeef; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

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Wiley, 2016

Published in: Advanced Functional Materials
Öttking, Rolf; Kupke, Steve; Nadimi, Ebrahim; Leitsmann, Roman; Lazarevic, Florian; Plänitz, Philipp; Roll, Guntrade; Slesazeck, Stefan; Trentzsch, Martin; Mikolajick, Thomas

Defect generation and activation processes in HfO2thin films: Contributions to stress-induced leakage currents : Defect generation and activation processes in HfO<sub>2</sub>thin films

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Wiley, 2015

Published in: physica status solidi (a)
Shuai, Yao; Zhou, Shengqiang; Wu, Chuangui; Zhang, Wanli; Bürger, Danilo; Slesazeck, Stefan; Mikolajick, Thomas; Helm, Manfred; Schmidt, Heidemarie

Control of Rectifying and Resistive Switching Behavior in BiFeO$_{3}$ Thin Films

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IOP Publishing, 2011

Published in: Applied Physics Express
Shuai, Yao; Zhou, Shengqiang; Streit, Stephan; Reuther, Helfried; Bürger, Danilo; Slesazeck, Stefan; Mikolajick, Thomas; Helm, Manfred; Schmidt, Heidemarie

Reduced leakage current in BiFeO3 thin films with rectifying contacts

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AIP Publishing, 2011

Published in: Applied Physics Letters
Mulaosmanovic, Halid; Ocker, Johannes; Müller, Stefan; Schroeder, Uwe; Müller, Johannes; Polakowski, Patrick; Flachowsky, Stefan; van Bentum, Ralf; Mikolajick, Thomas; Slesazeck, Stefan

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

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American Chemical Society (ACS), 2017

Published in: ACS Applied Materials & Interfaces
Mikolajick, Thomas; Müller, Stefan; Schenk, Tony; Yurchuk, Ekaterina; Slesazeck, Stefan; Schröder, Uwe; Flachowsky, Stefan; van Bentum, Ralf; Kolodinski, Sabine; Polakowski, Patrick; Müller, Johannes

Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors

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Trans Tech Publications Ltd, 2014

Published in: 6th Forum on New Materials - Part C
Pešić, Milan; Künneth, Christopher; Hoffmann, Michael; Mulaosmanovic, Halid; Müller, Stefan; Breyer, Evelyn T.; Schroeder, Uwe; Kersch, Alfred; Mikolajick, Thomas; Slesazeck, Stefan

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

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Springer Science and Business Media LLC, 2017

Published in: Journal of Computational Electronics
Yurchuk, Ekaterina; Muller, Johannes; Paul, Jan; Schlosser, Till; Martin, Dominik; Hoffmann, Raik; Mueller, Stefan; Slesazeck, Stefan; Schroeder, Uwe; Boschke, Roman; van Bentum, Ralf; Mikolajick, Thomas

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

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Institute of Electrical and Electronics Engineers (IEEE), 2014

Published in: IEEE Transactions on Electron Devices

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