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Wortmann, A.; Heime, K.; Beneking, H.

A new concept for microstrip-integrated GaAs Schottky-diodes

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Institute of Electrical and Electronics Engineers (IEEE), 1975

Published in: IEEE Transactions on Electron Devices
Sommer, V; Hedrich, J; Weigel, K; Perillieux, O; Heime, K

Observation and modelling of RTS in InAlAs/InGaAs/InP HFETs

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Elsevier BV, 1995

Published in: Solid-State Electronics
Steiner, K.; Seiler, U.; Heime, K.; Kuphal, E.

Influence of p-InP buffer layers on submicron InGaAs/InP junction field-effect transistors

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AIP Publishing, 1988

Published in: Applied Physics Letters
Kugler, S.; Steiner, K.; Seiler, U.; Heime, K.; Kuphal, E.

Low-frequency noise measurements on n-InGaAs/p-InP junction field-effect transistor structures

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AIP Publishing, 1988

Published in: Applied Physics Letters
Loreck, L.; Dambkes, H.; Heime, K.; Ploog, K.; Weimann, G.

Deep-level analysis in (AlGa)As—GaAs 2-D electron gas devices by means of low-frequency noise measurements

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Institute of Electrical and Electronics Engineers (IEEE), 1984

Published in: IEEE Electron Device Letters
Schubert, E. F.; Ploog, K.; D�mbkes, H.; Heime, K.

Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors : Part I. Effect of parallel conductance : Part I. Effect of parallel conductance

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Springer Science and Business Media LLC, 1984

Published in: Applied Physics A Solids and Surfaces
Schubert, E. F.; Ploog, K.; D�mbkes, H.; Heime, K.

Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors : Part II. Hot electron effects : Part II. Hot electron effects

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Springer Science and Business Media LLC, 1984

Published in: Applied Physics A Solids and Surfaces
Xu, Xiangang; Cui, Deliang; Tang, Zhe; Hao, Xiaopeng; K., Heime

InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine

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Springer Science and Business Media LLC, 2002

Published in: Science China Mathematics
Giesen, Ch; Szymakowski, A; Rushworth, S; Heuken, M; Heime, K

MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor

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Elsevier BV, 2000

Published in: Journal of Crystal Growth
Xu, J.; Cheng, X.J.; Behres, A.; Heime, K.

Calculation of lateral distribution of lattice constant for horizontal MOVPE grown quaternary alloys

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Elsevier BV, 1998

Published in: Journal of Crystal Growth
Schineller, B; Junas, Y; Heuken, M; Heime, K

Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode

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Elsevier BV, 1998

Published in: Materials Science and Engineering: B
Giesen, Ch; Beerbom, M.M; Xu, X.G; Heime, K

MOVPE of AlAsSb using tritertiarybutylaluminum

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Elsevier BV, 1998

Published in: Journal of Crystal Growth
Schardt, J.; Bernhardt, J.; Franke, M.; Starke, Ulrich; Heime, K.

Polarity Dependent Step Bunching and Structure of Hexagonal SiC Surfaces

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Trans Tech Publications, Ltd., 1998

Published in: Materials Science Forum
von Eichel-Streiber, C.; Behet, M.; Heuken, M.; Heime, K.

Doping of InAs, GaSb and InPSb by low pressure MOVPE

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Elsevier BV, 1997

Published in: Journal of Crystal Growth
Behres, A.; Werner, H.; Kohl, A.; Heime, K.

InP growth on ion-implanted InP substrate: a new method to achieve selective area MOVPE

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Elsevier BV, 1997

Published in: Journal of Crystal Growth
Schmidt, G.; Tuzinski, R.; Heime, K.; Richter, U.

Formation of Si/SiGe nanostructures by selective low pressure VPE

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Wiley, 1995

Published in: Physica Status Solidi (a)
Geurts, J.; Gnoth, D.; Finders, J.; Kohl, A.; Heime, K.

Interfaces of InGaAs/InP multi quantum wells studied by raman spectroscopy

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Wiley, 1995

Published in: Physica Status Solidi (a)
Müller, S.; Pillath, J.; Bauhofer, W.; Kohl, A.; Heime, K.

Persistent photoconductivity and electron density dependent magnetotransport measurements in narrow InGaAs/InP quantum wells

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AIP Publishing, 1995

Published in: Applied Physics Letters
Elsner, B.; Westphalen, R.; Heime, K.; Balk, P.

Deposition by LP-MOVPE in the Ga-In-As-P system on differently oriented substrates

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Elsevier BV, 1992

Published in: Journal of Crystal Growth
Behet, M.; Stoll, B.; Brysch, W.; Heime, K.

Growth of GaSb and InSb by low-pressure plasma MOVPE

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Elsevier BV, 1992

Published in: Journal of Crystal Growth

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