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Fistul', Viktor I. [Author] ; Fistul, Viktor I. [Other]

Heavily doped semiconductors

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New York: Plenum Press, 1969

Published in: Monographs in semiconductor physics ; 1
Bonč-Bruevič, Viktor Leopolʹdovič [Author] ; Knox, Robert E. [Other]

The electronic theory of heavily doped semiconductors

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New York: American Elsevier Publ., 1966
Tsuda, Takuya [Author] ; Fery, Andreas [Degree supervisor]; Zschech, Ehrenfried [Degree supervisor] Technische Universität Dresden

New dopable semiconducting polymer materials enabling novel device architecture

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Dresden, [2021?]
Kastner, Marc A. [Editor]; Fritzsche, Hellmut [Honoree]; Thomas, Gordon A. [Other]; Ovshinsky, Stanford R. [Other]

Disordered semiconductors : [to Hellmut Fritzsche in honor ... on the occasion of his 60. birthday]

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New York, NY [u.a.]: Plenum Press, 1987

Published in: Institute for Amorphous Studies series
Shklovskii, Boris Isaakovich [Author]; Ėfros, Aleksej L. [Author] ; Šklovskij, Boris I. [Other]

Electronic properties of doped semiconductors

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Berlin; Heidelberg: Springer Verlag, [1984]

Published in: Springer series in solid-state sciences ; 45
Li, Fenghong [Author]

Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases

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2005
Müller, Wolf Eckhard [Author]

Bandstruktur und Ladungsträgerstreuung in p-leitenden (Bi 1-x Sb x ) 2 Te 3 -Mischkristallen : Modellierung der thermoelektrischen Eigenschaften im Temperaturbereich 100..300 K - [Als Ms. gedr.]

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Düsseldorf: VDI-Verl., 1998

Published in: Verein Deutscher Ingenieure: Fortschritt-Berichte VDI / 19 ; 112
Wenzel, Roland [Author]

Ohm-Kontakte auf p-GaN : elektrische Eigenschaften und metallurgische Reaktionen - [1. Aufl.]

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Berlin: VWF, 1999

Published in: Akademische Abhandlungen zu den Ingenieurwissenschaften
Schwarze, Martin [Author] ; Technische Universität Dresden

From molecular parameters to electronic properties of organic thin films: a photoelectron spectroscopy study

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Dresden, 2018
Albrecht, Fanny [Author] ; Friedrich-Schiller-Universität Jena

Elektrische Charakterisierung von Störstellen in den III-V-Halbleitern GaAs und GaN mittels Radiotracer-Spektroskopie

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Jena, 2004
Persaud, Arun [Author]

Aligned ion implantation using scanning probes

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http://publikationen.ub.uni-frankfurt.de/volltexte/2007/4439/

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Tsuda, Takuya [Author] ; Fery, Andreas [Degree supervisor]; Zschech, Ehrenfried [Degree supervisor] Technische Universität Dresden

New dopable semiconducting polymer materials enabling novel device architecture

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Dresden, 2021
Albrecht, Fanny [Author]

Elektrische Charakterisierung von Störstellen in den III-V-Halbleitern GaAs und GaN mittels Radiotracer-Spektroskopie

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http://www.db-thueringen.de/dissOnline/FSU_Jena_Albrecht_Fanny

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Langer, Julia [Author] ; Ambacher, Oliver [Degree supervisor]; Ambacher, Oliver [Other]; Fiederle, Michael [Other] Albert-Ludwigs-Universität Freiburg Institut für Nachhaltige Technische Systeme, Albert-Ludwigs-Universität Freiburg Fakultät für Angewandte Wissenschaften

Quantum-grade diamond for cavity-based solutions

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Freiburg: Universität, 2022
Strupeit, Tim [Author]

Nanostrukturierte III-V-Halbleiter

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http://www.sub.uni-hamburg.de/opus/volltexte/2009/4226/index.html

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Langer, Julia [Author]

Quantum-grade diamond for cavity-based solutions

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Freiburg im Breisgau, 22.02.2022
Fiedler, Jan [Author] ; Gobsch, Gerhard [Other]; Helm, Manfred [Other]

Elektrische und strukturelle Eigenschaften von supraleitenden Schichten in Gallium-implantiertem Silizium und Germanium

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2013
Terheiden, Barbara [Contributor]; Steffens, Jonathan [Contributor]; Rinder, Johannes [Contributor]; Weit, Swetlana [Contributor]; Wünsch, Frank [Contributor]; Nicholson, Nathan [Contributor]; Wolyniec, Anna [Contributor] ; Universität Konstanz

Thema: Schwerpunkt passivierende CVD-Dotierschichten und optisch transparentere Poly-Si-Schicht : Schlussbericht der Universität Konstanz (öffentlich) : Thema des Verbunds: Kombination von passivierten p+/p und n+/n Übergängen mit CVD-basierten Dotierquellen für p-Typ und n-Typ Siliziumsolarzellen : Laufzeit: 01.05.2016 – 31.10.2019 (42 Monate) : Berichtzeitraum: 01.05.2016-31.10.2019

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[Konstanz]: Universität Konstanz, April 2020
Seren, Sven [Author] ; Gebr. Schmid Maschinenfabrik GmbH & Co

Kombination von passivierten p+/p und n+/n Übergängen mit CVD-basierten Dotierquellen für p-Typ und n-Typ Siliziumsolarzellen : Abschlussbericht : Akronym/Kurzbeschreibung: KOMPASS : Projektzeitraum: 01.05.2016-31.10.2019

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Freudenstadt: Gebr. Schmid GmbH, [2019?]
Merkle, Agnes [Author]; Peibst, Robby [Author] ; Institut für Solarenergieforschung Hameln

Kombination von passivierten p+/p und n+/n Übergängen mit CVD-basierten Dotierquellen für p-Typ und n-Typ Siliziumsolarzellen : Abschlussbericht zum BMWi-geförderten Projekt : Teilvorhaben des ISFH : Kurzbezeichnung: KOMPASS : Projektlaufzeit: 01.05.2016-31.10.2019

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Emmerthal: [Institut für Solarenergieforschung GmbH Hameln/Emmerthal (ISFH)], [2019?]

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