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  1. Kamata, N. [Author]; Klausing, H. [Author]; Fedler, F. [Author]; Mistele, D. [Author]; Aderhold, J. [Author]; Semchinova, O.K. [Author]; Graul, J. [Author]; Someya, T. [Author]; Arakawa, Y. [Author]

    Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AIGaN quantum well - [published Version]

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    Cambridge : Cambridge University Press, 2004

    Published in: EPJ Applied Physics 27 (2004)

  2. Tao, Jonathan Huai-Tse [Author]

    Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

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    [Erscheinungsort nicht ermittelbar]: eScholarship, University of California, 2010

  3. Miwa, Kazuki; Komatsu, Yuto; Toguchi, Masachika; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, Taketomo

    Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures

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    IOP Publishing, 2020

    Published in: Applied Physics Express

  4. Kaplar, Robert J.; Allerman, Andrew A.; Armstrong, Andrew M.; Crawford, Mary H.; Pickrell, Greg W.; Dickerson, Jeramy R.; Flicker, Jack D.; King, Michael P.; Cross, Karen C.; Glaser, Caleb E.; Van Heukelom, Michael; Baca, Albert G.; Reza, Shahed; Klein, Brianna; Douglas, Erica A.

    (Invited) Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices

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    The Electrochemical Society, 2017

    Published in: ECS Meeting Abstracts