> Details

Kamata, N. [Author]; Klausing, H. [Author]; Fedler, F. [Author]; Mistele, D. [Author]; Aderhold, J. [Author]; Semchinova, O.K. [Author]; Graul, J. [Author]; Someya, T. [Author]; Arakawa, Y. [Author]

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AIGaN quantum well - [published Version]

Reference
management

Bookmarks

Remove from
bookmarks

Share this on Whatsapp

Close

Bookmarks



You can manage bookmarks using lists, please log in to your user account for this.
  • Media type: E-Article; Text
  • Title: Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AIGaN quantum well
  • Contributor: Kamata, N. [Author]; Klausing, H. [Author]; Fedler, F. [Author]; Mistele, D. [Author]; Aderhold, J. [Author]; Semchinova, O.K. [Author]; Graul, J. [Author]; Someya, T. [Author]; Arakawa, Y. [Author]
  • imprint: Cambridge : Cambridge University Press, 2004
  • Published in: EPJ Applied Physics 27 (2004)
  • Issue: published Version
  • Language: English
  • DOI: https://doi.org/10.15488/2675; https://doi.org/10.1051/epjap:2004128
  • ISSN: 1286-0042
  • Keywords: Impurities ; Stress relaxation ; Semiconductor quantum wells ; Luminescence ; Above-gap excitation (AGE) ; III-V semiconductors ; Photon energies ; Photons ; Semiconducting aluminum compounds ; Metallorganic chemical vapor deposition ; Quantum efficiency ; Light emitting diodes ; Below-gap excitation (BGE) ; Molecular beam epitaxy ; Modulation ; Gallium nitride ; Semiconductor doping ; Optimization ; Strain
  • Origination:
  • Footnote: Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
  • Description: In order to improve the crystal quality of GaN-based light emitting devices, photoluminescence (PL) characterization of below-gap states in plasma assisted MBE-grown GaN/AlGaN quantum well (QW) structures has been done by utilizing a below-gap excitation (BGE) light in addition to an above-gap excitation light. The decrease of the band-edge PL intensity due to the addition of the BGE of 1.17 eV indicates the presence of an energy-matched below-gap state in the two-wavelength excited PL. In continuation to our previous efficiency improvement by applying modulation-doping to GaAs/AlGaAs QW's. we focused on several undopcd and Si-doped GaN/AlGaN QW's. Experimental results showed that Si modulation-doping reduces the density of below-gap states in the QW region, hence it is promising for increasing internal quantum efficiency of GaN-based QW's.
  • Access State: Open Access