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  1. Delage, Victor [Editor]; Brouard, Sylvain [Contributor]; Becher, Michael [Contributor]; Foucault, Martial [Contributor]; Vasilopoulos, Pavlos [Contributor]; Galasso, Vincenzo [Contributor]; Hönnige, Christoph [Contributor]; Kerrouche, Eric [Contributor]; Pons, Vincent [Contributor]; Kriesi, Hanspeter [Contributor]; Nadeau, Richard [Contributor]; Reynié, Dominque [Contributor] ; Fondation pour l'Innovation Politique

    COVID-19 - United States, China and Russia: great powers worry public opinion : comparative analysis : Austria, France, Germany, Italy, New Zealand, Sweden, United Kingdom

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    [Paris]: Fondation pour l'Innovation Politique, June 2020

    Published in: Contribution / Fondation pour l'Innovation Politique ; # 2

  2. Maier, David [Other]; Kaiser, Ute [Other]; Troadec, David [Other]; Gaquière, Christophe [Other]; Alomari, Mohammed [Other]; Kohn, Erhard [Other]; Diforte-Poisson, Marie-Antoinette [Other]; Dua, Christian [Other]; Delage, Sylvain L. [Other]; Grandjean, Nicolas [Other]; Carlin, Jean-Franç̧ois [Other]; Chuvilin, Andrey [Other]

    High temperature stability of nitride-based power HEMTs

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    Ulm: Universität Ulm. Fakultät für Ingenieurwissenschaften und Informatik, 2011

  3. Maier, David [Other]; Kaiser, Ute [Other]; Delage, Sylvain L. [Other]; Kohn, Erhard [Other]; Alomari, Mohammed [Other]; Grandjean, Nicolas [Other]; Carlin, Jean-Franç̧ois [Other]; Diforte-Poisson, Marie-Antoinette [Other]; Dua, Christian [Other]; Chuvilin, Andrey [Other]; Troadec, David [Other]; Gaquière, Christophe [Other]

    Testing the temperature limits of GaN-based HEMT devices

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    Ulm: Universität Ulm. Fakultät für Ingenieurwissenschaften und Informatik, 2011

  4. Pitaval, Charles; Lacam, Cédric; Defrance, Nicolas; Gaquière, Christophe; Michel, Nicolas; Parillaud, Olivier; Delage, Sylvain L.

    Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors

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    Wiley, 2023

    Published in: physica status solidi (a), 220 (2023) 16

  5. Nsele, Séraphin Dieudonné; Escotte, Laurent; Tartarin, Jean-Guy; Piotrowicz, Stéphane; Delage, Sylvain L.

    Broadband Frequency Dispersion Small-Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs

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    Institute of Electrical and Electronics Engineers (IEEE), 2013

    Published in: IEEE Transactions on Electron Devices, 60 (2013) 4, Seite 1372-1378

  6. Chvála, Aleš; Szobolovszký, Robert; Kováč, Jaroslav; Florovič, Martin; Marek, Juraj; Černaj, Ľuboš; Donoval, Daniel; Kováč, Jaroslav; Dua, Christian; Delage, Sylvain L.; Jacquet, Jean-Claude

    Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

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    ASME International, 2019

    Published in: Journal of Electronic Packaging, 141 (2019) 3

  7. Aroulanda, Sébastien; Patard, Olivier; Altuntas, Philippe; Michel, Nicolas; Pereira, Jorge; Lacam, Cédric; Gamarra, Piero; Delage, Sylvain L.; Defrance, Nicolas; de Jaeger, Jean-Claude; Gaquière, Christophe

    Cl2/Ar based atomic layer etching of AlGaN layers

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    American Vacuum Society, 2019

    Published in: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 37 (2019) 4

  8. Jardel, Olivier; Jacquet, Jean-Claude; Baczkowski, Lény; Carisetti, Dominique; Lancereau, Didier; Olivier, Maxime; Aubry, Raphaël; di Forte Poisson, Marie-Antoinette; Dua, Christian; Piotrowicz, Stéphane; Delage, Sylvain L.

    InAlN/GaN HEMTs based L-band high-power packaged amplifiers

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    Cambridge University Press (CUP), 2014

    Published in: International Journal of Microwave and Wireless Technologies, 6 (2014) 6, Seite 565-572

  9. Ostermaier, Clemens; Lagger, Peter; Alomari, Mohammed; Herfurth, Patrick; Maier, David; Alexewicz, Alexander; Forte-Poisson, Marie-Antoinette di; Delage, Sylvain L.; Strasser, Gottfried; Pogany, Dionyz; Kohn, Erhard

    Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure

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    Elsevier BV, 2012

    Published in: Microelectronics Reliability, 52 (2012) 9-10, Seite 1812-1815

  10. Maier, David; Alomari, Mohammed; Grandjean, Nicolas; Carlin, Jean-Francois; Diforte-Poisson, Marie-Antoinette; Dua, Christian; Chuvilin, Andrey; Troadec, David; Gaquiere, Christophe; Kaiser, Ute; Delage, Sylvain L.; Kohn, Erhard

    Testing the Temperature Limits of GaN-Based HEMT Devices

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    Institute of Electrical and Electronics Engineers (IEEE), 2010

    Published in: IEEE Transactions on Device and Materials Reliability, 10 (2010) 4, Seite 427-436

  11. Potier, Clément; Jacquet, Jean-Claude; Dua, Christian; Martin, Audrey; Campovecchio, Michel; Oualli, Mourad; Jardel, Olivier; Piotrowicz, Stéphane; Laurent, Sylvain; Aubry, Raphaël; Patard, Olivier; Gamarra, Piero; di Forte-Poisson, Marie-Antoinette; Delage, Sylvain L.; Quéré, Raymond

    Highlighting trapping phenomena in microwave GaN HEMTs by low-frequencyS-parameters

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    Cambridge University Press (CUP), 2015

    Published in: International Journal of Microwave and Wireless Technologies, 7 (2015) 3-4, Seite 287-296

  12. Pitaval, Charles; Aroulanda, Sébastien; Fouzi, Yassine; Defrance, Nicolas; Lacam, Cédric; Michel, Nicolas; El Bondry, Nadia; Oualli, Mourad; Teisseire, Laurent; Jacquet, Jean-Claude; Piotrowicz, Stéphane; Gaquiere, Christophe; Delage, Sylvain L.

    InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE

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    AIP Publishing, 2024

    Published in: Applied Physics Letters, 125 (2024) 1

  13. Jardel, Olivier; Callet, Guillaume; Dufraisse, Jérémy; Piazza, Michele; Sarazin, Nicolas; Chartier, Eric; Oualli, Mourad; Aubry, Raphaël; Reveyrand, Tibault; Jacquet, Jean-Claude; Di Forte Poisson, Marie-Antoinette; Morvan, Erwan; Piotrowicz, Stéphane; Delage, Sylvain L.

    Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

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    Cambridge University Press (CUP), 2011

    Published in: International Journal of Microwave and Wireless Technologies, 3 (2011) 3, Seite 301-309

  14. Klionsky, Daniel J; Abdelmohsen, Kotb; Abe, Akihisa; Abedin, Md Joynal; Abeliovich, Hagai; Acevedo Arozena, Abraham; Adachi, Hiroaki; Adams, Christopher M; Adams, Peter D; Adeli, Khosrow; Adhihetty, Peter J; Adler, Sharon G; Agam, Galila; Agarwal, Rajesh; Aghi, Manish K; Agnello, Maria; Agostinis, Patrizia; Aguilar, Patricia V; Aguirre-Ghiso, Julio; Airoldi, Edoardo M; Ait-Si-Ali, Slimane; Akematsu, Takahiko; Akporiaye, Emmanuel T; Al-Rubeai, Mohamed; [...]

    Guidelines for the use and interpretation of assays for monitoring autophagy (3rd edition)

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    Informa UK Limited, 2016

    Published in: Autophagy, 12 (2016) 1, Seite 1-222