Media type: E-Article Title: Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure Contributor: Ostermaier, Clemens; Lagger, Peter; Alomari, Mohammed; Herfurth, Patrick; Maier, David; Alexewicz, Alexander; Forte-Poisson, Marie-Antoinette di; Delage, Sylvain L.; Strasser, Gottfried; Pogany, Dionyz; Kohn, Erhard imprint: Elsevier BV, 2012 Published in: Microelectronics Reliability Language: English DOI: 10.1016/j.microrel.2012.06.006 ISSN: 0026-2714 Origination: Footnote: